利索-全球专利检索

  1. 登录
  2. 注册
发明申请
US20080045035A1 Etching solution for etching metal layer, etching method using the etching solution, and method of fabricating semiconductor product using the etching solution 审中-公开
用于蚀刻金属层的蚀刻溶液，使用蚀刻溶液的蚀刻方法以及使用该蚀刻溶液制造半导体产品的方法

Etching solution for etching metal layer, etching method using the etching solution, and method of fabricating semiconductor product using the etching solution
摘要：
A metal etching solution may include nitric acid, hydrochloric acid, organic acid and water. A semiconductor product fabricating method may include forming a seed layer on a substrate with a metal pad, forming a sacrificial layer that may have an opening exposing the seed layer on the substrate with the seed layer, forming a gold bump that may fill the opening of the sacrificial layer by performing gold electroplating, removing the sacrificial layer, and etching the seed layer exposed by the gold bump, using an etching solution that may include nitric acid, hydrochloric acid, organic acid and water.
摘要（中）：

金属蚀刻溶液可以包括硝酸，盐酸，有机酸和水。 半导体产品制造方法可以包括用金属焊盘在衬底上形成晶种层，形成牺牲层，牺牲层可以具有使种子层暴露在衬底上的种子层的开口，形成可以填充 使用可以包括硝酸，盐酸，有机酸和水的蚀刻溶液进行金电镀，去除牺牲层和蚀刻由金凸块暴露的种子层的牺牲层。

信息查询
Global Dossier Espacenet
0/0