- 专利标题： COPLANAR SILICON-ON-INSULATOR (SOI) REGIONS OF DIFFERENT CRYSTAL ORIENTATIONS AND METHODS OF MAKING THE SAME
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申请号： US11929490申请日： 2007-10-30
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公开(公告)号： US20080048286A1公开(公告)日： 2008-02-28
- 发明人: Louis Hsu , Jack Mandelman
- 申请人： Louis Hsu , Jack Mandelman
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
In a first aspect, a first method is provided for semiconductor device manufacturing. The first method includes the steps of (1) providing a substrate; and (2) forming a first silicon-on-insulator (SOI) region having a first crystal orientation, a second SOI region having a second crystal orientation and a third SOI region having a third crystal orientation on the substrate. The first, second and third SOI regions are coplanar. Numerous other aspects are provided.
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