发明申请
- 专利标题: Abnormality detection circuit
- 专利标题(中): 异常检测电路
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申请号: US11880506申请日: 2007-07-23
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公开(公告)号: US20080048732A1公开(公告)日: 2008-02-28
- 发明人: Takashi Oki
- 申请人: Takashi Oki
- 优先权: JPJP2006-199810 20060721
- 主分类号: H02H1/00
- IPC分类号: H02H1/00 ; H03F1/00 ; H03F3/217 ; H03K5/19
摘要:
An abnormality detection circuit monitors a power supply voltage and, when the power supply voltage drops, outputs an abnormality detection signal of a predetermined level. The source of a detection transistor as a P-channel MOSFET is connected to a power supply line to which a power supply voltage to be monitored is applied. A detection resistor as an impedance element is provided between the drain of the detection transistor and a ground terminal. A capacitor is provided between the gate of the detection transistor and the ground terminal. A charging path is provided between the gate of the detection transistor and the power supply line. The abnormality detection circuit outputs a drain voltage of the detection transistor as an abnormality detection signal.
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