发明申请
US20080048732A1 Abnormality detection circuit 审中-公开
异常检测电路

  • 专利标题: Abnormality detection circuit
  • 专利标题(中): 异常检测电路
  • 申请号: US11880506
    申请日: 2007-07-23
  • 公开(公告)号: US20080048732A1
    公开(公告)日: 2008-02-28
  • 发明人: Takashi Oki
  • 申请人: Takashi Oki
  • 优先权: JPJP2006-199810 20060721
  • 主分类号: H02H1/00
  • IPC分类号: H02H1/00 H03F1/00 H03F3/217 H03K5/19
Abnormality detection circuit
摘要:
An abnormality detection circuit monitors a power supply voltage and, when the power supply voltage drops, outputs an abnormality detection signal of a predetermined level. The source of a detection transistor as a P-channel MOSFET is connected to a power supply line to which a power supply voltage to be monitored is applied. A detection resistor as an impedance element is provided between the drain of the detection transistor and a ground terminal. A capacitor is provided between the gate of the detection transistor and the ground terminal. A charging path is provided between the gate of the detection transistor and the power supply line. The abnormality detection circuit outputs a drain voltage of the detection transistor as an abnormality detection signal.
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