公开(公告)号：US06920224B2

公开(公告)日：2005-07-19

申请号：US09976025

申请日：2001-10-15

申请人： Takashi Oki

发明人： Takashi Oki

IPC分类号： H04R3/04 ,  H03G5/00 ,  H03G5/02 ,  H02B1/00 ,  H04R1/10 ,  H04R5/02

CPC分类号： H03G5/00

摘要： A deep bass sound booster device comprises a high-pass filter to which an input sound signal is fed and which permits only a frequency component higher than a predetermined frequency to pass through so as to output a resulting signal, a bass booster to which the input sound signal is fed and which amplifies only a frequency component lower than the predetermined frequency and attenuates another frequency component so as to output a resulting signal, a switch to which the signal output from the bass booster is fed at one end and which, when turned on, outputs that signal at another end, and an adder to which the signal output from the high-pass filter is fed and to which the signal output from the switch is fed, the adder adding together those two signals and outputting a resulting signal.

摘要翻译： 深低音增音装置包括高通滤波器，输入声音信号被馈送到该高通滤波器，并且仅允许高于预定频率的频率分量通过，以输出结果信号;低音增强器，输入 声音信号被馈送并且仅放大低于预定频率的频率分量，并且衰减另一频率分量以便输出结果信号，从一个端部输入从低音增强器输出的信号的开关，当转动时 在另一端输出信号，以及从高通滤波器输出的信号被馈送到加法器，加法器从该开关输出信号，加法器将这两个信号相加并输出结果信号。

公开(公告)号：US08653754B2

公开(公告)日：2014-02-18

申请号：US13008125

申请日：2011-01-18

申请人： Hiroki Kikuchi ,  Masao Yonemaru ,  Takashi Oki

发明人： Hiroki Kikuchi ,  Masao Yonemaru ,  Takashi Oki

IPC分类号： H05B37/02 ,  H03K3/26 ,  G05F1/10

CPC分类号： H03F3/347 ,  G05F3/262 ,  H03F3/087 ,  H03F2200/456 ,  H03F2200/91

摘要： A current driving circuit may include a reference voltage input terminal; a resistor connection terminal; an output terminal via which the light emitting element is connected; a reference voltage generating unit; a transistor arranged such that one terminal thereof is connected to the resistor connection terminal; and an operational amplifier including first and second non-inverting input terminals and a single inverting input terminal, and arranged such that the output terminal thereof is connected to a control terminal of the transistor, the internal reference voltage is input to the first non-inverting input terminal, the external reference voltage is input to the second non-inverting input terminal, and the inverting input terminal thereof is connected to the resistor connection terminal. When the external resistor is connected between the resistor connection terminal and a ground terminal, a driving current is output via the output terminal.

摘要翻译： 电流驱动电路可以包括参考电压输入端; 电阻连接端子; 连接发光元件的输出端子; 参考电压产生单元; 晶体管，其一端连接到电阻器连接端子; 以及包括第一和第二非反相输入端子和单反相输入端子的运算放大器，并且被布置为使得其输出端子连接到晶体管的控制端子，内部参考电压被输入到第一非反相 输入端子，外部参考电压输入到第二同相输入端子，其反相输入端子连接到电阻器连接端子。 当外部电阻连接在电阻连接端子和接地端子之间时，通过输出端子输出驱动电流。

公开(公告)号：US5766568A

公开(公告)日：1998-06-16

申请号：US691310

申请日：1996-08-02

申请人： Hirofumi Kurisu ,  Toshikazu Kodani ,  Atsuya Kawase ,  Takashi Oki

发明人： Hirofumi Kurisu ,  Toshikazu Kodani ,  Atsuya Kawase ,  Takashi Oki

IPC分类号： C01F5/22 ,  C01F5/00 ,  C01G9/00 ,  C08K3/22 ,  C09K21/02 ,  C01B13/36 ,  C01F5/14

CPC分类号： C01F5/00 ,  C01G9/00 ,  C09K21/02 ,  C01P2002/54

摘要： A composite metal hydroxide is produced by reacting magnesium-containing aqueous solution (X) including water soluble zinc compound wherein magnesium ion concentration is 0.01 to 1 mol/liter with alkaline material (Y) at a specific reaction equivalent ratio. Further, a composite metal hydroxide represented by the following general formula (1) is produced by hydrothermally treating thus obtained composite metal hydroxide within a temperature range of 100.degree. to 200.degree. C. for aging in chlorine-containing aqueous solution having a specific chlorine ion concentration: Mg.sub.1-x Zn.sub.x (OH).sub.2 (1) wherein x indicates a positive number within a range of 0.003.ltoreq.x.ltoreq.0.1. A uniform metallic solid solution can be obtained as a composite metal hydroxide by the above series of processes. Further, its crystal shape can be controlled thereby so as to restrain occurrence of secondary aggregation. Still further, a flame retardant high-molecular composition obtained by including thus obtained composite metal hydroxide into a high-molecular weight composition exerts high flame retardancy and shows superiority in mechanical strength.

摘要翻译： 通过使镁离子浓度为0.01〜1摩尔/升的水溶性锌化合物的含镁水溶液（X）与碱性物质（Y）以特定的反应当量比进行反应来制造复合金属氢氧化物。 此外，通过在100℃〜200℃的温度范围内对这样得到的复合金属氢氧化物进行水热处理，制造由以下通式（1）表示的复合金属氢氧化物，以在具有特定氯离子的含氯水溶液中老化 浓度：Mg1-xZnx（OH）2（1）其中x表示在0.003≤x≤0.1的范围内的正数。 通过上述一系列方法可以得到均匀的金属固溶体作为复合金属氢氧化物。 此外，可以控制其晶体形状，从而抑制二次聚集的发生。 此外，通过将由此得到的复合金属氢氧化物包含在高分子量组合物中获得的阻燃性高分子组合物发挥高阻燃性并且显示机械强度的优异性。

公开(公告)号：US20080048732A1

公开(公告)日：2008-02-28

申请号：US11880506

申请日：2007-07-23

申请人： Takashi Oki

发明人： Takashi Oki

IPC分类号： H02H1/00 ,  H03F1/00 ,  H03F3/217 ,  H03K5/19

CPC分类号： G01R31/40 ,  G01R19/16547 ,  H03F1/52 ,  H03F3/217

摘要： An abnormality detection circuit monitors a power supply voltage and, when the power supply voltage drops, outputs an abnormality detection signal of a predetermined level. The source of a detection transistor as a P-channel MOSFET is connected to a power supply line to which a power supply voltage to be monitored is applied. A detection resistor as an impedance element is provided between the drain of the detection transistor and a ground terminal. A capacitor is provided between the gate of the detection transistor and the ground terminal. A charging path is provided between the gate of the detection transistor and the power supply line. The abnormality detection circuit outputs a drain voltage of the detection transistor as an abnormality detection signal.

摘要翻译： 异常检测电路监视电源电压，当电源电压下降时，输出预定电平的异常检测信号。 作为P沟道MOSFET的检测晶体管的源极连接到施加要监视的电源电压的电源线。 作为阻抗元件的检测电阻器设置在检测晶体管的漏极和接地端子之间。 在检测晶体管的栅极和接地端子之间提供电容器。 在检测晶体管的栅极和电源线之间设置充电路径。 异常检测电路将检测晶体管的漏极电压作为异常检测信号输出。

公开(公告)号：US09250800B2

公开(公告)日：2016-02-02

申请号：US13579378

申请日：2011-02-17

申请人： Sigehide Yano ,  Kazunori Hisa ,  Takashi Oki ,  Masahide Tanaka ,  Masami Hisa

发明人： Sigehide Yano ,  Kazunori Hisa ,  Takashi Oki ,  Masahide Tanaka

IPC分类号： G06F3/0488 ,  G06F3/01 ,  G06F3/023 ,  G06F3/0484

CPC分类号： G06F3/04883 ,  G06F3/018 ,  G06F3/0235 ,  G06F3/045 ,  G06F3/04845 ,  G06F2203/04104 ,  G06F2203/04806 ,  G06F2203/04808

摘要： A touch-panel input device as disclosed in the specification comprises a touch panel and an input controller capable of switching between a right-hand two-point touch input sensing mode suitable for the placement of right fingers and a left-hand two-point touch input sensing mode suitable for the placement of left fingers, wherein the input controller senses two-point touches on the touch panel in either of these input sensing modes.

摘要翻译： 如说明书中所公开的触摸面板输入装置包括触摸面板和输入控制器，其能够在适合于放置右手指的右手两点触摸输入感测模式和左手两点触摸之间进行切换 输入感测模式适于放置左手指，其中输入控制器在这些输入感测模式中感测触摸面板上的两点触摸。

公开(公告)号：US20130033448A1

公开(公告)日：2013-02-07

申请号：US13579378

申请日：2011-02-17

申请人： Sigehide Yano ,  Takashi Oki ,  Masahide Tanaka ,  Masami Hisa

发明人： Sigehide Yano ,  Kazunori Hisa ,  Takashi Oki ,  Masahide Tanaka

IPC分类号： G06F3/041

CPC分类号： G06F3/04883 ,  G06F3/018 ,  G06F3/0235 ,  G06F3/045 ,  G06F3/04845 ,  G06F2203/04104 ,  G06F2203/04806 ,  G06F2203/04808

摘要： A touch-panel input device as disclosed in the specification comprises a touch panel and an input controller capable of switching between a right-hand two-point touch input sensing mode suitable for the placement of right fingers and a left-hand two-point touch input sensing mode suitable for the placement of left fingers, wherein the input controller senses two-point touches on the touch panel in either of these input sensing modes.

摘要翻译： 如说明书中所公开的触摸面板输入装置包括触摸面板和输入控制器，其能够在适合于放置右手指的右手两点触摸输入感测模式和左手两点触摸之间进行切换 输入感测模式适于放置左手指，其中输入控制器在这些输入感测模式中感测触摸面板上的两点触摸。

公开(公告)号：US07006030B2

公开(公告)日：2006-02-28

申请号：US10839181

申请日：2004-05-06

申请人： Takashi Oki

发明人： Takashi Oki

IPC分类号： H03M1/66

CPC分类号： H03M1/0827 ,  H01L23/5225 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A semiconductor integrated circuit device has an analog signal conductor and a digital signal conductor formed on a single circuit board. In the lowest layer is laid a polysilicon conductor as the digital signal conductor, on top thereof is laid a first aluminum conductor as a shielding conductor, and further on top thereof is laid a second aluminum conductor as the analog signal conductor. With this structure, it is possible to give the highest priority to improving the transmission quality of analog signals and simultaneously reduce transfer of noise from the digital signal conductor to the analog signal conductor.

摘要翻译： 半导体集成电路器件具有形成在单个电路板上的模拟信号导体和数字信号导体。 在最下层放置多晶硅导体作为数字信号导体，其顶部放置第一铝导体作为屏蔽导体，并且在其顶部放置第二铝导体作为模拟信号导体。 利用这种结构，可以最优先地提高模拟信号的传输质量，并且同时减少噪声从数字信号导体到模拟信号导体的传输。