Invention Application
- Patent Title: Flash memory system and programming method performed therein
- Patent Title (中): 闪存系统及其中执行的编程方法
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Application No.: US11730800Application Date: 2007-04-04
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Publication No.: US20080049520A1Publication Date: 2008-02-28
- Inventor: Shin-wook Kang , Dong-woo Lee
- Applicant: Shin-wook Kang , Dong-woo Lee
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2006-0079947 20060823
- Main IPC: G11C11/40
- IPC: G11C11/40

Abstract:
Provided are a flash memory system and a programming method performed in the flash memory system. The flash memory system includes a buffer unit including a plurality of buffers, and temporarily storing data transmitted by a host; a plurality of channel units each including at least one flash memory chip that includes a plurality of memory cell arrays; and a control unit which controls the data stored in the buffer unit to be sequentially transmitted to the channel units and the transmitted data to be recorded to the memory cell arrays of the flash memory chips in the channel units.
Public/Granted literature
- US07765359B2 Flash memory system and programming method performed therein Public/Granted day:2010-07-27
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