发明申请
US20080054354A1 PHOTO MASK, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND METHOD OF MANUFACTURING THE SAME
审中-公开
照片掩模，半导体集成电路装置及其制造方法
- 专利标题： PHOTO MASK, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 照片掩模，半导体集成电路装置及其制造方法
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申请号： US11849928申请日： 2007-09-04
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公开(公告)号： US20080054354A1公开(公告)日： 2008-03-06
- 发明人: Ho-Jin OH , Jee-Eun JUNG
- 申请人： Ho-Jin OH , Jee-Eun JUNG
- 申请人地址： KR Gyeonggi-do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR2006-0084853 20060904
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; G03F9/00 ; H01L21/336
摘要：
A photo mask, a semiconductor integrated circuit, and a method of manufacturing the same are provided. The photo mask includes light transmitting rows and recess trenches, respectively, that include a short region in every other light transmitting row. In the semiconductor integrated circuit, the short region may include a dummy transistor so that short-circuiting bridges that may occur between adjacent recess trenches will not adversely affect the operations of the semiconductor integrated circuit.
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