发明申请
- 专利标题: Capacitor and method of manufacturing the same
- 专利标题(中): 电容器及其制造方法
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申请号: US11878698申请日: 2007-07-26
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公开(公告)号: US20080054400A1公开(公告)日: 2008-03-06
- 发明人: Woo-Sung Lee , Hong-Bum Park , Hyun-Jin Shin , Jong-Bom Seo
- 申请人: Woo-Sung Lee , Hong-Bum Park , Hyun-Jin Shin , Jong-Bom Seo
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2006-0085177 20060905
- 主分类号: H01L29/92
- IPC分类号: H01L29/92 ; H01L21/02
摘要:
Example embodiments relate to a capacitor including p-type doped silicon germanium and a method of manufacturing the capacitor. The capacitor may include a lower electrode, a dielectric layer, an upper electrode, a barrier layer and a capping layer. The lower electrode may have a cylindrical shape. The dielectric layer may be on the lower electrode. The dielectric layer may have a uniform thickness. The upper electrode may be on the dielectric layer. The upper electrode may have a more uniform thickness. The capping layer may be on the upper electrode. The capping layer may include a silicon germanium layer doped with p-type impurities. The barrier layer may be between the upper electrode and the capping layer to prevent (or reduce) the p-type impurities from infiltrating into the dielectric layer.