Invention Application
US20080055963A1 PHASE CHANGE RANDOM ACCESS MEMORY AND RELATED METHODS OF OPERATION
有权
相变随机存取存储器及其相关操作方法
- Patent Title: PHASE CHANGE RANDOM ACCESS MEMORY AND RELATED METHODS OF OPERATION
- Patent Title (中): 相变随机存取存储器及其相关操作方法
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Application No.: US11844512Application Date: 2007-08-24
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Publication No.: US20080055963A1Publication Date: 2008-03-06
- Inventor: Kwang-jin LEE , Woo-yeong CHO
- Applicant: Kwang-jin LEE , Woo-yeong CHO
- Applicant Address: KR Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-do
- Priority: KR10-2006-0084863 20060904
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
In a phase change random access memory (PRAM) device, data is programmed in selected memory cells using a plurality of program loops. In each program loop, division program operations for cell groups including the selected memory cells are performed in consecutive timeslots.
Public/Granted literature
- US07535747B2 Phase change random access memory and related methods of operation Public/Granted day:2009-05-19
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