Invention Application
- Patent Title: SEMICONDUCTOR MEMORY DEVICE HAVING FAULTY CELLS
- Patent Title (中): 具有故障细胞的半导体存储器件
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Application No.: US11931881Application Date: 2007-10-31
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Publication No.: US20080055986A1Publication Date: 2008-03-06
- Inventor: Kunihiro KATAYAMA , Takayuki Tamura , Satoshi Watatani , Kiyoshi Inoue , Shigemasa Shiota , Masashi Naito
- Applicant: Kunihiro KATAYAMA , Takayuki Tamura , Satoshi Watatani , Kiyoshi Inoue , Shigemasa Shiota , Masashi Naito
- Priority: JP08-042451 19960229
- Main IPC: G11C29/24
- IPC: G11C29/24

Abstract:
In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories.
Public/Granted literature
- US07616485B2 Semiconductor memory device having faulty cells Public/Granted day:2009-11-10
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