发明申请
- 专利标题: Memory system including flash memory and method of operating the same
- 专利标题(中): 内存系统包括闪存及其操作方法
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申请号: US11710991申请日: 2007-02-27
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公开(公告)号: US20080055989A1公开(公告)日: 2008-03-06
- 发明人: Kyoong-Han Lee , Young-Joon Choi , Yang-Sup Lee
- 申请人: Kyoong-Han Lee , Young-Joon Choi , Yang-Sup Lee
- 优先权: KR2006-85865 20060906
- 主分类号: G11C29/24
- IPC分类号: G11C29/24
摘要:
A method for operating a memory system including a flash memory device having a plurality of memory blocks comprises determining whether a read error generated during a read operation of the flash memory device is caused by read disturbance and replacing a memory block which includes the read error, with a spare memory block if the read error is caused by read disturbance.
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