发明申请
US20080055999A1 Nonvolatile semiconductor memory device and writing method thereof
失效
非易失性半导体存储器件及其写入方法
- 专利标题: Nonvolatile semiconductor memory device and writing method thereof
- 专利标题(中): 非易失性半导体存储器件及其写入方法
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申请号: US11892738申请日: 2007-08-27
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公开(公告)号: US20080055999A1公开(公告)日: 2008-03-06
- 发明人: Tsutomu Nakajima , Kenji Kozakai , Koji Sakui
- 申请人: Tsutomu Nakajima , Kenji Kozakai , Koji Sakui
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-240102 20060905
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
Disclosed herein is a nonvolatile semiconductor memory device including: a first selection transistor configured to be connected to a bit line; a second selection transistor configured to be connected to a common source line; a memory cell configured to be connected in series between the first and second selection transistors; and writing means for carrying out writing for a selected memory cell. In the nonvolatile semiconductor memory device, the writing means applies a potential yielding a writing-blocked state via a bit line to a memory cell for which writing is not to be carried out, of a memory cell selected for writing, and the writing means carries out writing for a writing-target memory cell in a state in which a bit line has a bit line potential state dependent upon a threshold value state of the writing-target memory cell.