Method for fabricating semiconductor device

Invention Application

US20080057668A1 Method for fabricating semiconductor device 有权

Title translation: 制造半导体器件的方法

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Patent Title: Method for fabricating semiconductor device
Patent Title (中): 制造半导体器件的方法
Application No.: US11511277

Application Date: 2006-08-29
Publication No.: US20080057668A1

Publication Date: 2008-03-06
Inventor: Tomohiro Okamura
Applicant: Tomohiro Okamura
Main IPC: H01L21/76
IPC: H01L21/76

Method for fabricating semiconductor device

Abstract:

According to the present invention, a method for fabricating a semiconductor device includes: providing a semiconductor substrate; forming a STI region on the semiconductor substrate; forming a channel region on the semiconductor substrate; implanting impurities into the STI region; and performing a thermal treatment to diffuse impurities to a side of the channel region.

Abstract(Chinese):

根据本发明，一种制造半导体器件的方法包括：提供半导体衬底; 在半导体衬底上形成STI区; 在所述半导体衬底上形成沟道区; 将杂质植入STI区域; 并进行热处理以将杂质扩散到沟道区的一侧。

Public/Granted literature

US07790568B2 Method for fabricating semiconductor device Public/Granted day:2010-09-07

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/76	...组件间隔离区的制作