Invention Application
- Patent Title: Method and Device for Controlled Cleaving Process
- Patent Title (中): 控制劈裂过程的方法和装置
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Application No.: US11842104Application Date: 2007-08-20
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Publication No.: US20080057675A1Publication Date: 2008-03-06
- Inventor: Francois Henley , Nathan Cheung
- Applicant: Francois Henley , Nathan Cheung
- Applicant Address: US CA San Jose 95134
- Assignee: Silicon Genesis Corporation
- Current Assignee: Silicon Genesis Corporation
- Current Assignee Address: US CA San Jose 95134
- Main IPC: H01L21/46
- IPC: H01L21/46
Abstract:
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
Public/Granted literature
- US07470600B2 Method and device for controlled cleaving process Public/Granted day:2008-12-30
Information query
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