发明申请
- 专利标题： METHOD FOR USING A MODIFIED POST-ETCH CLEAN RINSING AGENT
- 专利标题（中）： 使用改性后蚀刻清洁剂的方法
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申请号： US11468884申请日： 2006-08-31
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公开(公告)号： US20080057730A1公开(公告)日： 2008-03-06
- 发明人: Phillip Daniel Matz , Trace Hurd
- 申请人： Phillip Daniel Matz , Trace Hurd
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
The present invention provides a method for manufacturing an integrated circuit. In one embodiment, the method includes etching one or more openings within a substrate using an etch tool, and subjecting the one or more openings to a post-etch clean, wherein a delay time exists between removing the substrate from the etch tool and the subjecting the one or more opening to the post-etch clean. This method may further include exposing the substrate having been subjected to the post-etch clean to a rinsing agent, wherein a resistivity of the rinsing agent is selected based upon the delay time.
公开/授权文献
- US07732345B2 Method for using a modified post-etch clean rinsing agent 公开/授权日：2010-06-08
信息查询
IPC分类:
