发明申请
- 专利标题: DOPANT ACTIVATION IN DOPED SEMICONDUCTOR SUBSTRATES
- 专利标题(中): 掺杂半导体衬底中的掺杂活性
-
申请号: US11844810申请日: 2007-08-24
-
公开(公告)号: US20080057740A1公开(公告)日: 2008-03-06
- 发明人: Jeffrey Munro , Srinivas Nemani , Young Lee , Marlon Menezes , Christopher Bencher , Vijay Parihar
- 申请人: Jeffrey Munro , Srinivas Nemani , Young Lee , Marlon Menezes , Christopher Bencher , Vijay Parihar
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.
公开/授权文献
- US07989366B2 Dopant activation in doped semiconductor substrates 公开/授权日:2011-08-02