公开(公告)号：US20080057740A1

公开(公告)日：2008-03-06

申请号：US11844810

申请日：2007-08-24

申请人： Jeffrey Munro ,  Srinivas Nemani ,  Young Lee ,  Marlon Menezes ,  Christopher Bencher ,  Vijay Parihar

发明人： Jeffrey Munro ,  Srinivas Nemani ,  Young Lee ,  Marlon Menezes ,  Christopher Bencher ,  Vijay Parihar

IPC分类号： H01L21/00

CPC分类号： H01L21/268 ,  H01L21/26513

摘要： Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.

摘要翻译： 公开了用于激活掺杂半导体衬底中的掺杂剂的方法。 碳前体流入其中设置掺杂半导体衬底的衬底处理室。 在基板处理室中由碳前体形成等离子体。 用等离子体沉积在衬底上的碳膜。 在沉积低于500℃的碳膜的同时保持基板的温度。沉积的碳膜暴露于电磁辐射小于10ms的时间段，并且在电磁波包括的波长处具有大于0.3的消光系数 辐射。

公开(公告)号：US07989366B2

公开(公告)日：2011-08-02

申请号：US11844810

申请日：2007-08-24

申请人： Jeffrey C. Munro ,  Srinivas D. Nemani ,  Young S. Lee ,  Marlon Menezes ,  Christopher Dennis Bencher ,  Vijay Parihar

发明人： Jeffrey C. Munro ,  Srinivas D. Nemani ,  Young S. Lee ,  Marlon Menezes ,  Christopher Dennis Bencher ,  Vijay Parihar

IPC分类号： H01L21/00

CPC分类号： H01L21/268 ,  H01L21/26513

摘要： Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.

摘要翻译： 公开了用于激活掺杂半导体衬底中的掺杂剂的方法。 碳前体流入其中设置掺杂半导体衬底的衬底处理室。 在基板处理室中由碳前体形成等离子体。 用等离子体沉积在衬底上的碳膜。 在沉积低于500℃的碳膜的同时保持基板的温度。沉积的碳膜暴露于电磁辐射小于10ms的时间段，并且在电磁波包括的波长处具有大于0.3的消光系数 辐射。

公开(公告)号：US20110263068A1

公开(公告)日：2011-10-27

申请号：US13087823

申请日：2011-04-15

申请人： KAUSHAL K. SINGH ,  Robert Visser ,  Vijay Parihar ,  Randhir P. S. Thakur

发明人： KAUSHAL K. SINGH ,  Robert Visser ,  Vijay Parihar ,  Randhir P. S. Thakur

IPC分类号： H01L31/18

CPC分类号： H01L31/02366 ,  H01L31/055 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： Embodiments of the invention generally relate to solar cell devices and methods for manufacturing such solar cell devices. In one embodiment, a method for forming a solar cell device includes depositing a conversion layer over a first surface of a substrate, depositing a first transparent conductive oxide layer over a second surface of the substrate that is opposite the first surface, depositing a first p-doped silicon layer over the first transparent conductive oxide layer, depositing a first intrinsic silicon layer over the first p-doped silicon layer, and depositing a first n-doped silicon layer over the first intrinsic silicon layer. The method further includes depositing a second transparent conductive oxide layer over the first n-doped silicon layer, and depositing an electrically conductive contact layer over the second transparent conductive oxide layer.

摘要翻译： 本发明的实施例一般涉及用于制造这种太阳能电池装置的太阳能电池装置和方法。 在一个实施例中，一种用于形成太阳能电池器件的方法包括在衬底的第一表面上沉积转换层，在衬底的与第一表面相对的第二表面上沉积第一透明导电氧化物层，沉积第一p 在第一透明导电氧化物层之上的掺杂硅层，在第一p掺杂硅层上沉积第一本征硅层，以及在第一本征硅层上沉积第一n掺杂硅层。 该方法还包括在第一n掺杂硅层上沉积第二透明导电氧化物层，以及在第二透明导电氧化物层上沉积导电接触层。

公开(公告)号：US07772134B2

公开(公告)日：2010-08-10

申请号：US12546522

申请日：2009-08-24

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： H01L21/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US07429532B2

公开(公告)日：2008-09-30

申请号：US11199592

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/302

CPC分类号： H01L21/0332 ,  G03F1/54 ,  G03F1/68 ,  G03F7/202 ,  H01L21/3081 ,  H01L21/3086

摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.

摘要翻译： 一种使用光学可写掩模在半导体衬底上处理薄膜结构的方法，所述方法包括将衬底放置在反应室中，所述衬底在其表面上具有根据预定的暴露于光源的靶层 （a）将含碳工艺气体引入所述室中，（b）在可折入路径中产生可重入环形的RF等离子体电流，所述折返路径包括位于所述腔内的过程区域 通过将等离子体RF源功率耦合到可折入路径的外部部分，（c）将RF等离子体偏置功率或偏置电压耦合到工件。 该方法还包括根据预定图案，用适合于转换光学可写掩膜层的透明度或不透明度的特性的光进行光学写入，并通过掩模层曝光目标层与读取光 具有与书写光不同的特征。

公开(公告)号：US20080108210A1

公开(公告)日：2008-05-08

申请号：US11697267

申请日：2007-04-05

申请人： Vijay Parihar ,  Christopher Dennis Bencher ,  Rajesh Kanuri ,  Marlon E. Menezes

发明人： Vijay Parihar ,  Christopher Dennis Bencher ,  Rajesh Kanuri ,  Marlon E. Menezes

IPC分类号： H01L21/425

CPC分类号： H01L21/02115 ,  C23C14/02 ,  C23C14/0605 ,  C23C14/35 ,  H01L21/02266 ,  H01L21/02354 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/3146

摘要： A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength.

摘要翻译： 等离子体增强的物理气相沉积工艺在离子注入晶片上沉积无定形碳层，用于具有激光波长的强线束的晶片的动态表面退火。 沉积工艺在低于掺杂剂聚集阈值温度的晶片温度下进行，并且包括将晶片引入到具有覆盖晶片的含碳靶的腔室中，并将载气提供到腔室中。 该方法还包括产生晶片偏置电压并将目标源功率施加到含碳靶足以产生含碳靶的离子轰击。 将晶片偏置电压设定为在激光波长处具有期望的消光系数的被沉积的无定形碳层的水平。

公开(公告)号：US07335611B2

公开(公告)日：2008-02-26

申请号：US11199572

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/4763 ,  H01L21/00

CPC分类号： B23K26/0738 ,  B23K26/0608 ,  B23K26/0876 ,  B23K26/361 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76886

摘要： A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.

摘要翻译： 在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层 比例开口，包括垂直侧壁，在第一阻挡层上沉积包括阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。 该方法还包括通过以下步骤来退火主导体层：（a）将来自连续波激光器阵列的光引导到至少部分穿过薄膜结构的光线，以及（b）相对于薄的平面 薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。 沉积无定形碳光吸收层的步骤包括将含碳工艺气体引入反应器的反应器室中，该反应器室在反应器的工艺区域中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过工艺区域并向衬底施加偏置电压。

公开(公告)号：US07312162B2

公开(公告)日：2007-12-25

申请号：US11131941

申请日：2005-05-17

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/31

CPC分类号： C23C16/26 ,  C23C16/505 ,  C23C16/52 ,  H01L21/268 ,  H01L21/3146

摘要： A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.

摘要翻译： 在工件上沉积碳层的方法包括将工件放置在反应器室中，将含碳工艺气体引入室中，在可重入路径中产生可重入环形RF等离子体电流，该等离子体电流包括通过 将等离子体RF源功率耦合到可折入路径的外部部分，以及将RF等离子体偏置功率或偏置电压耦合到工件。

公开(公告)号：US07135392B1

公开(公告)日：2006-11-14

申请号：US11185651

申请日：2005-07-20

申请人： Bruce E. Adams ,  Dean Jennings ,  Abhilash J. Mayur ,  Vijay Parihar ,  Joseph M. Ranish

发明人： Bruce E. Adams ,  Dean Jennings ,  Abhilash J. Mayur ,  Vijay Parihar ,  Joseph M. Ranish

IPC分类号： H01L21/42

CPC分类号： H01L21/268 ,  B23K26/0604 ,  B23K26/0676 ,  B23K26/0738 ,  B23K2101/40 ,  G02B6/4206 ,  G02B6/4218 ,  G02B27/0994 ,  H01L21/67115 ,  H01S5/4012 ,  H01S5/405

摘要： A method for forming P-N junctions in a semiconductor wafer includes ion implanting dopant impurities into the wafer and annealing the wafer using a thermal flux laser annealing apparatus that includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow axis, plural respective cylindrical lenses overlying respective ones of the rows of laser emitters for collimating light from the respective rows along a fast axis generally perpendicular to the slow axis, a homogenizing light pipe having an input face at a first end for receiving light from the plural cylindrical lenses and an output face at an opposite end, the light pipe comprising a pair of reflective walls extending between the input and output faces and separated from one another along the direction of the slow axis, and scanning apparatus for scanning light emitted from the homogenizing light pipe across the wafer in a scanning direction parallel to the fast axis.

摘要翻译： 一种用于在半导体晶片中形成PN结的方法包括将晶体中的掺杂杂质离子注入到晶片中并使用热通量激光退火装置退火晶片，所述热通量激光退火装置包括沿着慢轴延伸的多个平行的排列的半导体激光发射器阵列， 圆柱形透镜，覆盖相应行的激光发射器，用于沿着大致垂直于慢轴的快轴校准来自各行的光;均质光管，其具有在第一端处的输入面，用于接收来自多个柱面透镜的光;以及 在相对端的输出面，所述光管包括在所述输入和输出面之间延伸并且沿着所述慢轴的方向彼此分离的一对反射壁，以及用于扫描从均匀化光管发射的光的扫描装置 该晶片在平行于快轴的扫描方向上。

公开(公告)号：US20060234458A1

公开(公告)日：2006-10-19

申请号：US11105270

申请日：2005-04-13

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Ranish

IPC分类号： H01L21/336

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 将以10.6μm发光的第一激光源例如CO 2 2作为线束和第二激光源聚焦在硅晶片上的热处理装置和方法，例如， 在808nm处发射的GaAs激光棒作为围绕线束的较大光束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO 2辐射的能量小于硅带隙能量，因此硅对其透明，但是长波长辐射被自由载流子吸收。