发明申请
- 专利标题: METHODS FOR FABRICATING IMAGE SENSOR DEVICES
- 专利标题(中): 用于制作图像传感器装置的方法
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申请号: US11531290申请日: 2006-09-13
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公开(公告)号: US20080061330A1公开(公告)日: 2008-03-13
- 发明人: Gwo-Yuh Shiau , Ming-Chyi Liu , Yuan-Chih Hsieh , Shih-Chi Fu , Chia-Shiung Tsai
- 申请人: Gwo-Yuh Shiau , Ming-Chyi Liu , Yuan-Chih Hsieh , Shih-Chi Fu , Chia-Shiung Tsai
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L31/062
- IPC分类号: H01L31/062
摘要:
Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.
公开/授权文献
- US07709872B2 Methods for fabricating image sensor devices 公开/授权日:2010-05-04