发明申请
US20080061340A1 MEMORY CELL ARRAY AND METHOD OF FORMING THE MEMORY CELL ARRAY
审中-公开
存储单元阵列和形成存储单元阵列的方法
- 专利标题： MEMORY CELL ARRAY AND METHOD OF FORMING THE MEMORY CELL ARRAY
- 专利标题（中）： 存储单元阵列和形成存储单元阵列的方法
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申请号： US11470792申请日： 2006-09-07
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公开(公告)号： US20080061340A1公开(公告)日： 2008-03-13
- 发明人: Lars Heineck , Martin Popp
- 申请人： Lars Heineck , Martin Popp
- 申请人地址： DE Muenchen
- 专利权人： QIMONDA AG
- 当前专利权人： QIMONDA AG
- 当前专利权人地址： DE Muenchen
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A memory cell array having a plurality of memory cells is disclosed. In one embodiment, each memory cell includes a storage capacitor and an access transistor, a plurality of bit lines orientated in a first direction, a plurality of word lines orientated in a second direction, the second direction being perpendicular to the first direction, a semiconductor substrate with a surface, a plurality of active areas being formed in the semiconductor substrate, each active area extending in the second direction, the access transistors being partially formed in the active areas and electrically coupling corresponding ones of the storage capacitors to corresponding bit lines, wherein a gate electrode of each of the access transistors is connected with a corresponding word line, a capacitor dielectric of the storage capacitor has a relative dielectric constant of more than 8, and the word lines are disposed above the bit lines.
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