发明申请
- 专利标题: Packaged Stacked Semiconductor Device And Method For Manufacturing The Same
- 专利标题(中): 封装叠层半导体器件及其制造方法
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申请号: US11576323申请日: 2005-11-29
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公开(公告)号: US20080061402A1公开(公告)日: 2008-03-13
- 发明人: Masamichi Ishihara , Akira Izumi
- 申请人: Masamichi Ishihara , Akira Izumi
- 优先权: JP2004-345274 20041130
- 国际申请: PCT/JP05/21852 WO 20051129
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/44
摘要:
The present invention provides a packaged stacked semiconductor device which includes bumps serving as external electrode terminals, the bumps being provided on both a front surface and a back surface of the device, and which is sacked on another semiconductor device, substrate, or board having electrode terminals so that the bumps are directly and electrically connected to the electrode terminals. The semiconductor device includes a semiconductor substrate having through-electrodes formed therein. The semiconductor device has, on the front surface side of the semiconductor substrate, a wiring layer connected to the through-electrodes, an insulating film formed on the wiring layer, additional wiring formed on the insulating film, post electrodes connected to the wiring, and external connection bumps connected to the post electrodes. The semiconductor device has, on the back surface side of the semiconductor substrate, an insulating film formed so as to cover the back surface of the semiconductor substrate, exclusive of tip end portions of the through-electrodes, wiring which is formed on the insulating film and to which the through-electrodes are connected, and external connection bumps connected to the wiring.
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