A layered capacitor structure comprises two or more semiconductor/dielectric plates formed above an insulating surface which provides mechanical support, with the plates arranged in a vertical stack on the insulating surface. An insulating layer is on each plate, patterned and etched to provide an opening which allows the top of one plate to be in physical and electrical contact with the bottom of the subsequent plate. Contact openings are provided through the insulating layers, each of which provides access to a respective semiconductor layer and is insulated from any other semiconductor/dielectric plate. Electrical contacts through the contact openings provide electrical connections to respective semiconductor layers. The present structure can include as many stacked layers as needed to provide a desired total capacitance or range of capacitances.