- 专利标题： Circuit implementation of a dynamic power supply for SRAM core array
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申请号： US11516994申请日： 2006-09-07
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公开(公告)号： US20080062802A1公开(公告)日： 2008-03-13
- 发明人: Wesley Lin , Jhon-Jhy Liaw , Fang-Shi Jordan Lai , Chia-Fu Lee
- 申请人： Wesley Lin , Jhon-Jhy Liaw , Fang-Shi Jordan Lai , Chia-Fu Lee
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C5/14
摘要：
A SRAM device includes at least one memory cell having a source line for receiving an internal supply power, and a voltage management circuit coupled to the source line for generating the internal supply power that varies in at least two different voltage levels, depending on various operation modes of the memory cell.