发明申请
- 专利标题: METHOD OF ADJUSTING SURFACE CHARACTERISTIC OF SUBSTRATE
- 专利标题(中): 调整基板表面特性的方法
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申请号: US11623091申请日: 2007-01-15
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公开(公告)号: US20080063811A1公开(公告)日: 2008-03-13
- 发明人: Chau-Hui Wang , Tsung-Hui Cheng , Hsun-Yu Li , Hsin-Ching Kao
- 申请人: Chau-Hui Wang , Tsung-Hui Cheng , Hsun-Yu Li , Hsin-Ching Kao
- 申请人地址: TW Hsinchu
- 专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人地址: TW Hsinchu
- 优先权: TW95133848 20060913
- 主分类号: H05H1/24
- IPC分类号: H05H1/24
摘要:
A method of adjusting a surface characteristic of a substrate is provided, which includes the following steps. A substrate is provided. An atmosphere pressure plasma process is performed on the surface of the substrate to form a film layer on the surface of the substrate, so as to adjust the surface energy of the substrate, wherein a process gas of the atmosphere pressure plasma process includes a surface modifying precursor, a carrier gas and a plasma ignition gas. In particular, the surface modifying precursor is selected from fluorosilane, polysiloxane and a combination thereof, and the ratio of fluorosilane to polysiloxane is between 0 and 1.