发明申请
US20080067587A1 Method for producing an electronic component, method for producing a thyristor, method for producing a drain-extended MOS filed-effect transistor, electronic component, drain-extended MOS field-effect transistor, electronic component arrangement
有权
电子元件的制造方法，晶闸管的制造方法，漏极扩展MOS场效应晶体管的制造方法，电子元件，漏极扩展MOS场效应晶体管，电子元件配置
- 专利标题： Method for producing an electronic component, method for producing a thyristor, method for producing a drain-extended MOS filed-effect transistor, electronic component, drain-extended MOS field-effect transistor, electronic component arrangement
- 专利标题（中）： 电子元件的制造方法，晶闸管的制造方法，漏极扩展MOS场效应晶体管的制造方法，电子元件，漏极扩展MOS场效应晶体管，电子元件配置
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申请号： US11800984申请日： 2007-05-08
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公开(公告)号： US20080067587A1公开(公告)日： 2008-03-20
- 发明人: Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
- 申请人： Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
- 优先权： DE102006022126.5-33 20060511
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/332 ; H01L21/336
摘要：
In a method for producing an electronic component, a first doped connection region and a second doped connection region are formed on or above a substrate; a body region is formed between the first doped connection region and the second doped connection region; at least two gate regions separate from one another are formed on or above the body region; at least one partial region of the body region is doped by means of introducing dopant atoms, wherein the dopant atoms are introduced into the at least one partial region of the body region through at least one intermediate region formed between the at least two separate gate regions.
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