Invention Application
- Patent Title: HIGH VOLTAGE GENERATOR
- Patent Title (中): 高压发电机
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Application No.: US11858071Application Date: 2007-09-19
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Publication No.: US20080068069A1Publication Date: 2008-03-20
- Inventor: Dong-Myung EUN , Jung-Hwa LEE
- Applicant: Dong-Myung EUN , Jung-Hwa LEE
- Applicant Address: KR Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-do
- Priority: KR10-2006-0090476 20060919
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A high voltage generator is provided. The high voltage generator may comprise a high voltage output node, a plurality of pumping stages, a plurality of charge transfer elements, and a field relieving unit. The plurality of pumping stages sequentially pump charges in response to a sequentially enabled plurality of pump signals and output the pumped charges, respectively. The plurality of charge transfer elements sequentially transfer the charges sequentially pumped by the plurality of pumping stages to the next pumping stage and transfer the charge of an output node of the last pumping stage to the high voltage output node. The field relieving unit reduces the voltage of the input terminal of at least one of the plurality of charge transfer elements. The high voltage generator reduces hot carrier injection in charge transfer transistors without decreasing pumping efficiency.
Public/Granted literature
- US07573321B2 High voltage generator Public/Granted day:2009-08-11
Information query
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