发明申请
US20080069966A1 Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
审中-公开
具有室内的具有高耐腐蚀性喷涂膜的处理装置
- 专利标题： Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
- 专利标题（中）： 具有室内的具有高耐腐蚀性喷涂膜的处理装置
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申请号： US11980570申请日： 2007-10-31
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公开(公告)号： US20080069966A1公开(公告)日： 2008-03-20
- 发明人: Hayashi Otsuki
- 申请人： Hayashi Otsuki
- 申请人地址： JP Minato-ku
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Minato-ku
- 优先权： JP11-352018 19991210
- 主分类号： C23C4/10
- IPC分类号： C23C4/10 ; C23C16/06 ; C23C16/44 ; C23F1/00 ; C23C30/00
摘要：
A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of Al2O3 and Y2O3 is formed on an inner wall surface of the chamber and on those exposed surface of the members within the chamber and has a high-corrosion resistance and insulating property and, when the process gas is introduced onto a processing surface of a semiconductor wafer and diffused into it, any product is less liable to be deposited on a plasma generation area and on those members held within the chamber.