发明申请
US20080070369A1 MOS transistor device structure combining Si-trench and field plate structures for high voltage device
审中-公开
MOS晶体管器件结构组合了Si沟槽和场板结构的高压器件
- 专利标题： MOS transistor device structure combining Si-trench and field plate structures for high voltage device
- 专利标题（中）： MOS晶体管器件结构组合了Si沟槽和场板结构的高压器件
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申请号： US11945274申请日： 2007-11-27
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公开(公告)号： US20080070369A1公开(公告)日： 2008-03-20
- 发明人: Li-Che Chen , Chih-Chong Wang
- 申请人： Li-Che Chen , Chih-Chong Wang
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field; therefore the transistor device has a relatively small size.
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