公开(公告)号：US20130232373A1

公开(公告)日：2013-09-05

申请号：US13409116

申请日：2012-03-01

申请人： Tung-Yi Wang ,  Chih-Chong Wang ,  Chun-Ming Kuo

发明人： Tung-Yi Wang ,  Chih-Chong Wang ,  Chun-Ming Kuo

IPC分类号： G06F11/00

CPC分类号： G06F1/14 ,  H04W56/0015

摘要： A method and apparatus for performing real time clock (RTC) calibration through frame number calculation are provided, where the method is applied to an electronic device. The method includes the steps of: before power failure of the electronic device occurs, obtaining an original time value from an RTC of the electronic device and storing the original time value and a frame number of a first frame into a storage unit; and after the electronic device is powered on since elimination of the power failure, obtaining a frame number of a second frame and performing at least one calculation operation according to the frame number of the second frame, the frame number of the first frame, and the original time value to determine a calibrated time value of the RTC, and updating the RTC with at least one of the calibrated time value and a derivative of the calibrated time value.

摘要翻译： 提供了一种通过帧数计算执行实时时钟（RTC）校准的方法和装置，其中该方法应用于电子设备。 该方法包括以下步骤：在电子设备断电之前，从电子设备的RTC获得原始时间值，并将原始时间值和第一帧的帧号存储到存储单元中; 并且在电子设备被断电之后，获得第二帧的帧号并且根据第二帧的帧号，第一帧的帧号和第二帧的帧号执行至少一个计算操作 原始时间值以确定RTC的校准时间值，并且用校准时间值和校准时间值的导数中的至少一个来更新RTC。

公开(公告)号：US07368785B2

公开(公告)日：2008-05-06

申请号：US11420006

申请日：2006-05-24

申请人： Li-Che Chen ,  Chih-Chong Wang

发明人： Li-Che Chen ,  Chih-Chong Wang

IPC分类号： H01L29/76

CPC分类号： H01L29/7816 ,  H01L29/0619 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7823

摘要： A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field, therefore the transistor device has a relatively small size.

摘要翻译： 公开了一种高电压用金属氧化物半导体晶体管器件（HV MOS）及其制造方法。 HV MOS晶体管器件包括具有与多个场板结合的凹陷下表面的场氧化物区域，以延长用于干扰横向电场的路径，因此晶体管器件具有相对较小的尺寸。

公开(公告)号：US6042444A

公开(公告)日：2000-03-28

申请号：US322055

申请日：1999-05-27

申请人： Chih-Chong Wang

发明人： Chih-Chong Wang

IPC分类号： H01J1/304 ,  H01J9/02

CPC分类号： H01J9/025 ,  H01J1/3042

摘要： A method for fabricating a cathode of a field emission display. A doped polysilicon layer is formed over a substrate, and the doped polysilicon layer is patterned to form a plurality of field emitters. The doped polysilicon layer and the field emitters are patterned to form a plurality of field emission arrays. Then, a sharpening process is performed to form an oxide layer on the field emitters. A first dielectric layer and a second dielectric layer are formed conformal to the substrate, and a third dielectric layer is formed on the second dielectric layer. The third dielectric layer is planarized to expose the second dielectric layer on a top portion of each of the field emitters. The exposed second dielectric layer is removed, and an oxide layer is formed on the third dielectric layer and a top surface of the first dielectric layer on the top portion of the field emitter. A self-aligned metal layer is formed on the oxide layer. A portion of the self-aligned metal layer is removed to expose the oxide layer on the top portion of the field emitter, and gates are formed on the third dielectric layer. The exposed oxide layer and the first dielectric layer on the top portion of the field emitter are removed.

摘要翻译： 一种用于制造场发射显示器的阴极的方法。 在衬底上形成掺杂多晶硅层，并且将掺杂多晶硅层图案化以形成多个场致发射体。 掺杂多晶硅层和场发射体被图案化以形成多个场致发射阵列。 然后，进行锐化处理以在场致发射体上形成氧化物层。 第一电介质层和第二电介质层形成为与衬底保形，并且在第二电介质层上形成第三电介质层。 平面化第三电介质层以暴露每个场致发射体的顶部上的第二电介质层。 去除暴露的第二电介质层，并且在场发射体的顶部上的第三电介质层和第一电介质层的顶表面上形成氧化物层。 在氧化物层上形成自对准的金属层。 去除自对准金属层的一部分以露出场发射体顶部的氧化物层，并且在第三介电层上形成栅极。 去除暴露的氧化物层和场致发射体的顶部上的第一介电层。

公开(公告)号：US20080070369A1

公开(公告)日：2008-03-20

申请号：US11945274

申请日：2007-11-27

申请人： Li-Che Chen ,  Chih-Chong Wang

发明人： Li-Che Chen ,  Chih-Chong Wang

IPC分类号： H01L21/336

CPC分类号： H01L29/7816 ,  H01L29/0619 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7823

摘要： A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field; therefore the transistor device has a relatively small size.

摘要翻译： 公开了一种高电压用金属氧化物半导体晶体管器件（HV MOS）及其制造方法。 HV MOS晶体管器件包括具有与多个场板组合的凹陷下表面的场氧化物区域，以延长用于干扰横向电场的路径; 因此晶体管器件具有相对较小的尺寸。

公开(公告)号：US20060270171A1

公开(公告)日：2006-11-30

申请号：US11420006

申请日：2006-05-24

申请人： Li-Che Chen ,  Chih-Chong Wang

发明人： Li-Che Chen ,  Chih-Chong Wang

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L29/7816 ,  H01L29/0619 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7823

摘要： A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field, therefore the transistor device has a relatively small size.

摘要翻译： 公开了一种高电压用金属氧化物半导体晶体管器件（HV MOS）及其制造方法。 HV MOS晶体管器件包括具有与多个场板结合的凹陷下表面的场氧化物区域，以延长用于干扰横向电场的路径，因此晶体管器件具有相对较小的尺寸。

公开(公告)号：US06621696B1

公开(公告)日：2003-09-16

申请号：US10094169

申请日：2002-03-07

申请人： Chih-Chong Wang

发明人： Chih-Chong Wang

IPC分类号： G06F116

CPC分类号： G11B33/128 ,  G06F1/184 ,  G06F1/187

摘要： A non-screwed fastening device has a retaining ring and a shaft lever. The retaining ring has a first annular edge, an inner ring flange and a second annular edge. The first annular edge has a plurality of slits to make the retaining ring resilient and at least a groove located in the inner surface of the retaining ring. The inner ring flange is disposed in the surface region of the retaining ring for buckling the retaining ring and the shaft lever, and the second annular edge further has a recess region. The shaft lever has a first circular flute, a second circular flute, a first end portion and a second end portion. The first circular flute and the second circular flute are selectively buckled to the inner ring flange by the retaining ring resilience. One side region of the shaft lever having at least a lug is placed into the retaining ring along the groove and the first end portion is put into the locating hole of the peripheral device such that the lug is locked to the recess region for fastening.

摘要翻译： 非螺纹紧固装置具有保持环和轴杆。 保持环具有第一环形边缘，内环凸缘和第二环形边缘。 第一环形边缘具有多个狭缝，以使保持环弹性，并且至少一个凹槽位于保持环的内表面中。 内圈法兰设置在保持环的表面区域中，用于使保持环和轴杆弯曲，并且第二环形边缘还具有凹部区域。 轴杆具有第一圆形槽，第二圆形槽，第一端部和第二端部。 第一圆形槽和第二圆形槽通过保持环弹性选择性地弯曲到内圈凸缘。 具有至少一个凸耳的轴杆的一侧区域沿着凹槽放置在保持环中，并且第一端部被放入周边装置的定位孔中，使得凸耳锁定到凹部以用于紧固。

公开(公告)号：US5779514A

公开(公告)日：1998-07-14

申请号：US601153

申请日：1996-02-13

申请人： Huang-Chung Cheng ,  Chih-Chong Wang

发明人： Huang-Chung Cheng ,  Chih-Chong Wang

IPC分类号： H01J9/02

CPC分类号： H01J9/025

摘要： A new fabrication technology for the chimney-shaped metal field emission elements with a self-alignment process which makes the emitter structure symmetrical. This tectnology is based on the isotropic or anisotropic, wet or dry etching and then the sputtering deposition of the emither material as well as the wet etching of attaching silicon. The finished field emitters are with excellent uniformity and high reproducibility and are able to emit the current thirty times in magnitude higher than that from the conventional cone-shaped field emitters at the same electric field.

摘要翻译： 一种用于烟囱形金属场发射元件的新制造技术，具有使发射极结构对称的自对准过程。 该构造基于各向同性或各向异性，湿法或干蚀刻，然后基于材料的溅射沉积以及连接硅的湿蚀刻。 成品场发射体具有优异的均匀性和高再现性，并且能够在相同电场下发射比传统锥形场发射体高三十倍的电流。