发明申请
- 专利标题： MANUFACTURING METHOD OF FLASH MEMORY DEVICE
- 专利标题（中）： 闪存存储器件的制造方法
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申请号： US11849755申请日： 2007-09-04
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公开(公告)号： US20080073700A1公开(公告)日： 2008-03-27
- 发明人: Joo-Hyeon Lee
- 申请人： Joo-Hyeon Lee
- 优先权： KR10-2006-0092092 20060922
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/336
摘要：
A method for manufacturing a flash memory device includes: forming a floating gate on a tunnel oxide film formed on a semiconductor substrate; forming an ONO film on the floating gate; performing a well implant process to form a well on the semiconductor substrate; and performing an ashing process and a cleaning process using at least two of H2SO4, H2O2, HF, H2O, and O3. As a result, roughness is not generated on the upper surface of the ONO film which tends to cause data retention failures of the flash memory device during a high temperature operating life (HTOL) testing process, making it possible to improve the reliability of the flash memory device.
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