发明申请
- 专利标题: Photodetector in Germanium on Silicon
- 专利标题(中): 硅中锗的光电探测器
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申请号: US11793238申请日: 2004-12-24
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公开(公告)号: US20080073744A1公开(公告)日: 2008-03-27
- 发明人: Gianlorenzo Masini , Lorenzo Colace , Gaetano Assanto
- 申请人: Gianlorenzo Masini , Lorenzo Colace , Gaetano Assanto
- 国际申请: PCT/EP04/14714 WO 20041224
- 主分类号: H01L31/00
- IPC分类号: H01L31/00
摘要:
A photodetector structure includes a silicon-based waveguide in which optical signals to be detected travel in a given direction and are confined therein and a germanium layer disposed in contact with a portion of the silicon-based waveguide so that an evanescent tail of the propagating optical signal in the waveguide is coupled into the germanium layer. In addition, the germanium layer includes a mesa having a length along the signal propagating direction and a width in a direction substantially perpendicular to the propagating direction, in which the width of said mesa is smaller than its length. The photodetector also comprises a first and a second metal contacts, the first metallic contact being located on the germanium layer, the said second metallic contact being located on the silicon-based waveguide, the first and second contacts being used to collect electrons generated by light absorption to obtain an output electric signal.
公开/授权文献
- US08148794B2 Photodetector in germanium on silicon 公开/授权日:2012-04-03
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