- 专利标题： Method for forming a bump, semiconductor device and method of fabricating same, semiconductor chip, circuit board, and electronic instrument
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申请号： US11980126申请日： 2007-10-30
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公开(公告)号： US20080073783A1公开(公告)日： 2008-03-27
- 发明人: Fumiaki Matsushima , Tsutomu Ota , Akira Makabe
- 申请人： Fumiaki Matsushima , Tsutomu Ota , Akira Makabe
- 优先权： JP2000-267076 20000904
- 主分类号： H01L23/488
- IPC分类号： H01L23/488
摘要：
A method for forming a bump includes the steps of forming a resist layer so that a through-hole formed therein is located on a pad; and forming a metal layer to be electrically connected to the pad conforming to the shape of the through-hole. The metal layer is formed so as to have a shape in which is formed a region for receiving a soldering or brazing material.