发明申请
US20080074196A1 EMI REDUCTION STAGE IN A POST-AMPLIFIER 有权
后放大器中的EMI降低级别

  • 专利标题: EMI REDUCTION STAGE IN A POST-AMPLIFIER
  • 专利标题(中): 后放大器中的EMI降低级别
  • 申请号: US11697175
    申请日: 2007-04-05
  • 公开(公告)号: US20080074196A1
    公开(公告)日: 2008-03-27
  • 发明人: Jason Y. Miao
  • 申请人: Jason Y. Miao
  • 申请人地址: US CA Sunnyvale
  • 专利权人: Finisar Corporation
  • 当前专利权人: Finisar Corporation
  • 当前专利权人地址: US CA Sunnyvale
  • 主分类号: H03F3/08
  • IPC分类号: H03F3/08
EMI REDUCTION STAGE IN A POST-AMPLIFIER
摘要:
An amplifier output stage for reducing Electromagnetic Interference (EMI) that includes an output node and an input node. A first transistor has a base terminal coupled to the input node and has a collector terminal coupled to the output node. A second transistor has a base terminal coupled to an emitter terminal of the first transistor and has a collector terminal coupled to the output node. A third transistor has a collector terminal coupled to the emitter terminal of the first transistor and the base of the second transistor and has an emitter terminal coupled to a current source and to an emitter terminal of the second transistor. A resistor has a first terminal coupled to a base terminal of the third transistor and has a second terminal coupled to the emitter terminal of the first transistor.
公开/授权文献
信息查询
0/0