发明申请
- 专利标题: EMI REDUCTION STAGE IN A POST-AMPLIFIER
- 专利标题(中): 后放大器中的EMI降低级别
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申请号: US11697175申请日: 2007-04-05
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公开(公告)号: US20080074196A1公开(公告)日: 2008-03-27
- 发明人: Jason Y. Miao
- 申请人: Jason Y. Miao
- 申请人地址: US CA Sunnyvale
- 专利权人: Finisar Corporation
- 当前专利权人: Finisar Corporation
- 当前专利权人地址: US CA Sunnyvale
- 主分类号: H03F3/08
- IPC分类号: H03F3/08
摘要:
An amplifier output stage for reducing Electromagnetic Interference (EMI) that includes an output node and an input node. A first transistor has a base terminal coupled to the input node and has a collector terminal coupled to the output node. A second transistor has a base terminal coupled to an emitter terminal of the first transistor and has a collector terminal coupled to the output node. A third transistor has a collector terminal coupled to the emitter terminal of the first transistor and the base of the second transistor and has an emitter terminal coupled to a current source and to an emitter terminal of the second transistor. A resistor has a first terminal coupled to a base terminal of the third transistor and has a second terminal coupled to the emitter terminal of the first transistor.
公开/授权文献
- US07459982B2 EMI reduction stage in a post-amplifier 公开/授权日:2008-12-02
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