发明申请
US20080074920A1 Nonvolatile Memory with Reduced Coupling Between Floating Gates
审中-公开
浮动闸门耦合减少的非易失性存储器
- 专利标题： Nonvolatile Memory with Reduced Coupling Between Floating Gates
- 专利标题（中）： 浮动闸门耦合减少的非易失性存储器
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申请号： US11534139申请日： 2006-09-21
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公开(公告)号： US20080074920A1公开(公告)日： 2008-03-27
- 发明人: Henry Chien , George Matamis , Tuan Pham , Masaaki Higashitani , Hidetaka Horiuchi , Jeffrey W. Lutze , Nima Mokhlesi , Yupin Kawing Fong
- 申请人： Henry Chien , George Matamis , Tuan Pham , Masaaki Higashitani , Hidetaka Horiuchi , Jeffrey W. Lutze , Nima Mokhlesi , Yupin Kawing Fong
- 主分类号： G11C5/06
- IPC分类号： G11C5/06
摘要：
A nonvolatile memory array includes floating gates that have an inverted-T shape in cross section along a plane that is perpendicular to the direction along which floating cells are connected together to form a string. Adjacent strings are isolated by shallow trench isolation structures. An array having inverted-T shaped floating gates may be formed in a self-aligned manner.
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