发明申请
- 专利标题： METHOD FOR MANUFACTURING A GATE SIDEWALL SPACER USING AN ENERGY BEAM TREATMENT
- 专利标题（中）： 使用能量束处理方法制造闸门间隔板的方法
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申请号： US11533798申请日： 2006-09-21
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公开(公告)号： US20080076225A1公开(公告)日： 2008-03-27
- 发明人: Puneet Kohli , Manoj Mehrotra , Jin Zhao , Sameer Ajmera
- 申请人： Puneet Kohli , Manoj Mehrotra , Jin Zhao , Sameer Ajmera
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
The present invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among other steps, may include forming a gate structure over a substrate, forming at least a portion of gate sidewall spacers proximate sidewalls of the gate structure, and subjecting the at least a portion of the gate sidewall spacers to an energy beam treatment, the energy beam treatment configured to change a stress of the at least a portion of the gate sidewall spacers, and thus change a stress in the substrate therebelow.
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