公开(公告)号：US20170279028A1

公开(公告)日：2017-09-28

申请号：US15077683

申请日：2016-03-22

Applicant: Dong Zhao ,  George Jin Zhao

Inventor： Dong Zhao ,  George Jin Zhao

IPC: H01L39/12 ,  C01F15/00

CPC classification number: H01L39/12 ,  C01F15/00 ,  C01F17/00 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2006/40 ,  H01L39/005

Abstract: This disclosure will describe a novel finding and make the claim for the first time on a group of old compounds and formulated new compounds. These compounds have superconducting property at high temperatures, i.e., 151K or higher. Several compounds were prepared, though not well-purified, at around middle of 1900s. Their chemical, structural, electric and magnetic properties were studied and reported but their superconducting property has not been known and has never been exploited because the idea of type-II superconductivity was not proposed at that time. Consequently, we claim this finding as an invention even though our invention is based on the studies of the compounds' electric and magnetic properties along with their crystallographic features from the previous publications. The experiments to further verify their high temperature superconductivity require the utilization of sophisticated facilities on synthesizing highly pure compounds and the deregulation from government security authorities on purchasing the starting materials.

公开(公告)号：US09243086B2

公开(公告)日：2016-01-26

申请号：US13501585

申请日：2010-10-18

Applicant: Weili Li ,  Xianzhi Xia ,  Yuexiang Liu ,  Jigui Zhang ,  Suzhen Qiao ,  Jin Zhao ,  Ping Gao ,  Xinsheng Wang ,  Yang Tan ,  Zhihui Zhang ,  Linna Yang ,  Ruilin Duan ,  Renqi Peng

Inventor： Weili Li ,  Xianzhi Xia ,  Yuexiang Liu ,  Jigui Zhang ,  Suzhen Qiao ,  Jin Zhao ,  Ping Gao ,  Xinsheng Wang ,  Yang Tan ,  Zhihui Zhang ,  Linna Yang ,  Ruilin Duan ,  Renqi Peng

IPC: C08F4/649 ,  C08F110/06 ,  C08F4/654 ,  C08F10/00 ,  C07F3/00

CPC classification number: C08F10/00 ,  C07F3/003 ,  C08F110/06 ,  C08F2500/12 ,  C08F2500/24 ,  C08F4/651 ,  C08F4/6543 ,  C08F4/022

Abstract: A catalyst component for olefin polymerization is disclosed, which comprises a reaction product of the following components: (1) a spheric carrier; (2) a titanium compound; and optionally, (3) an electron donor, wherein the spheric carrier comprises a reaction product of at least the following components: (a) a magnesium halide represented by a general formula of MgX2-nRn, wherein X is independently chloride or bromide, R is a C1-C14 alkyl, a C6-C14 aryl, a C1-C14 alkoxy, or a C6-C14 aryloxy, and n is 0 or 1; (b) an alcohol compound; and (c) an epoxy compound represented by a general formula (I), wherein R2 and R3 are independently hydrogen, a C1-C5 linear or branched alkyl, or a C1-C5 linear or branched haloalkyl. When the catalyst of the invention is used in olefin polymerization, in particular in propylene polymerization, at least one of the following desired effects can be achieved: high polymerization activity of catalyst, high stereospecificity of catalyst, good hydrogen response of catalyst, high stereoregularity of polymer having high melt index, and low content of polymer fines.

Abstract translation: 公开了用于烯烃聚合的催化剂组分，其包含以下组分的反应产物：（1）球形载体; （2）钛化合物; 并且任选地，（3）电子给体，其中所述球载体包含至少以下组分的反应产物：（a）由通式MgX 2 -nR n表示的卤化镁，其中X独立地是氯或溴，R 是C 1 -C 14烷基，C 6 -C 14芳基，C 1 -C 14烷氧基或C 6 -C 14芳氧基，n是0或1; （b）醇化合物; 和（c）由通式（I）表示的环氧化合物，其中R2和R3独立地是氢，C1-C5直链或支链烷基或C1-C5直链或支链卤代烷基。 当本发明的催化剂用于烯烃聚合时，特别是在丙烯聚合中，可以达到以下期望效果中的至少一个：催化剂的高聚合活性，催化剂的高立体定向性，催化剂的氢气响应良好，立体定向性高 聚合物具有高熔体指数，低含量的聚合物细粉。

公开(公告)号：US08533799B2

公开(公告)日：2013-09-10

申请号：US12456803

申请日：2009-06-22

Applicant: Wei Ye ,  Yueping Liang ,  Wenchu Cen ,  Lin Wang ,  Jin Zhao ,  Tingjia Chen ,  Seshu Zheng ,  Yi Zeng

Inventor： Wei Ye ,  Yueping Liang ,  Wenchu Cen ,  Lin Wang ,  Jin Zhao ,  Tingjia Chen ,  Seshu Zheng ,  Yi Zeng

IPC: G06F21/20 ,  G06F21/31 ,  H04L29/06

CPC classification number: G06F21/31 ,  H04L41/5054 ,  H04L63/08 ,  H04M15/49 ,  H04M15/51

Abstract: A service integration platform system includes an interface configured to receive a service request initiated by an Independent Software Vendor (ISV) and one or more processors configured to authenticate the service request and in the event that the service request is authenticated, route the service request to an Internet Service Provider (ISP) providing the service to be further processed. The service request is routed to a deployment environment provided by the ISP in the event that the service request is received on a deployment Universal Resource Identifier (URI) corresponding to the deployment environment; the service request is routed to a test environment provided by the ISP in the event that the service request is received on a test URI corresponding to the test environment.

公开(公告)号：US20120302708A1

公开(公告)日：2012-11-29

申请号：US13480866

申请日：2012-05-25

Applicant: Xianzhi XIA ,  Yuexiang LIU ,  Jin ZHAO ,  Jigui ZHANG ,  Yongtai LING ,  Weili LI ,  Suzhen QIAO ,  Yang TAN ,  Renqi PENG ,  Ping GAO ,  Futang GAO ,  Zhihui ZHANG

Inventor： Xianzhi XIA ,  Yuexiang LIU ,  Jin ZHAO ,  Jigui ZHANG ,  Yongtai LING ,  Weili LI ,  Suzhen QIAO ,  Yang TAN ,  Renqi PENG ,  Ping GAO ,  Futang GAO ,  Zhihui ZHANG

IPC: C08F4/649 ,  C08F4/654 ,  C08F10/06

CPC classification number: C08F10/00 ,  C08F110/06 ,  C08F2500/12 ,  C08F2500/15 ,  C08F4/651 ,  C08F4/6543

Abstract: A magnesium halide adduct is provided, comprising at least one compound of the formula MgXY, at least one compound of the formula ROH, methanol, at least one modifying agent chosen from DOE and o-hydroxy benzoates, and optionally water. Also provided herein are a catalyst component comprising the magnesium halide adduct, a catalyst for olefin polymerization comprising the catalyst component; the respective processes for preparing the magnesium halide adduct and the catalyst component; use of the magnesium halide adduct for preparing the catalyst component, use of the catalyst component in a catalyst for olefin polymerization and use of the catalyst in olefin polymerization; and a process of olefin polymerization.

Abstract translation: 提供卤化镁加合物，其包含至少一种式MgXY化合物，至少一种式ROH的化合物，甲醇，至少一种选自DOE和邻羟基苯甲酸酯的改性剂，以及任选的水。 本文还提供了包含卤化镁加合物的催化剂组分，包含催化剂组分的烯烃聚合催化剂; 制备卤化镁加合物和催化剂组分的相应方法; 使用卤化镁加合物制备催化剂组分，在催化剂中使用催化剂组分进行烯烃聚合和在烯烃聚合中使用催化剂; 和烯烃聚合方法。

公开(公告)号：US20060254614A1

公开(公告)日：2006-11-16

申请号：US11459809

申请日：2006-07-25

Applicant: Ignacio Blanco ,  Jin Zhao ,  Nathan Kruse

Inventor： Ignacio Blanco ,  Jin Zhao ,  Nathan Kruse

IPC: B08B6/00

CPC classification number: H01J37/32082 ,  B08B7/0035 ,  C23C16/4405 ,  H01J2237/335 ,  Y10S438/905

Abstract: The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).

公开(公告)号：US20060254515A1

公开(公告)日：2006-11-16

申请号：US11459819

申请日：2006-07-25

Applicant: Ignacio Blanco ,  Jin Zhao ,  Nathan Kruse

Inventor： Ignacio Blanco ,  Jin Zhao ,  Nathan Kruse

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/32082 ,  B08B7/0035 ,  C23C16/4405 ,  H01J2237/335 ,  Y10S438/905

Abstract: The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).

Abstract translation: 在一个实施例中，本发明提供了一种用于清洁沉积室（100）的方法。 该方法包括通过使引入到具有内表面并且存在等离子体的沉积室中的气态氟化合物离解形成反应性等离子体清洗区的步骤（100）。 方法（100）还包括使所述气体氟化合物的流速升高以使整个沉积室中的反应性等离子体清洗区域移动的步骤（120），从而防止局部金属化合物沉积在内表面上。 其他实施例有利地将工艺（100）并入到用于清洁沉积室（205）的系统（200）和制造半导体器件（300）的方法中。

公开(公告)号：US07112546B2

公开(公告)日：2006-09-26

申请号：US10653661

申请日：2003-09-02

Applicant: Ignacio Blanco ,  Jin Zhao ,  Nathan Kruse

Inventor： Ignacio Blanco ,  Jin Zhao ,  Nathan Kruse

IPC: B08B9/00 ,  B08B7/00 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01J37/32082 ,  B08B7/0035 ,  C23C16/4405 ,  H01J2237/335 ,  Y10S438/905

Abstract: The present invention provides, in one embodiment, a method of manufacturing semiconductor devices. The method comprises transferring one or more substrate into a deposition chamber and depositing material layers on the substrate. The chamber has an interior surface. The method further includes, between the transfers, cleaning the deposition chamber using an in situ ramped cleaning process when material layer deposits in the deposition chamber reaches a predefined thickness. The in situ ramped cleaning process comprises forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber in a presence of a plasma. The cleaning process further includes ramping a flow rate of the gaseous fluorocompound in a presence of the plasma to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface.

Abstract translation: 本发明在一个实施例中提供一种制造半导体器件的方法。 该方法包括将一个或多个衬底转移到沉积室中并在衬底上沉积材料层。 该室具有内表面。 所述方法还包括在所述转移之间，当所述沉积室中的材料层沉积达到预定厚度时，使用原位斜面清洁过程清洁所述沉积室。 原位斜化清洗工艺包括通过在存在等离子体的情况下将引入到沉积室中的气态氟化合物解离来形成反应性等离子体清洗区。 清洁过程还包括在存在等离子体的情况下使气态氟化合物的流速升高，以使整个沉积室中的反应性等离子体清洗区域移动，从而防止局部金属化合物沉积在内表面上。

公开(公告)号：US20060165784A1

公开(公告)日：2006-07-27

申请号：US11081780

申请日：2005-03-17

Applicant: Jin Zhao

Inventor： Jin Zhao

IPC: A61K9/20 ,  A61K33/10

CPC classification number: A61K9/2072 ,  A61K33/06 ,  A61K33/10 ,  A61K33/14 ,  A61K2300/00

Abstract: A dissoluble oral tablet of calcium supplement and the method of making the product are provided. This calcium supplement comprises an exposure area and a coating covered area. The surface ratio between the exposure area and the coating covered area is about 1:1 to 1:12. The exposure area can be a hole, an opening, or their combination. The preferred samples contain about CaCO3 200-600 mg with MgCL2 50-150 mg or MgSO4 50-100 mg. The favorable CaCO3 tablet reaction with stomach acid is: CaCO3+2HCL=CaCL2+H2CO3=Ca+++2CL−+H2O+CO2 ↑. The CO2 is the natural bubble broker. The stomach HCL is the natural CaCL2 maker.

Abstract translation: 提供钙补充剂的可溶性口服片剂和制备该产品的方法。 该钙补充剂包括曝光区域和涂覆覆盖区域。 曝光面积和涂层覆盖面积之间的表面比为约1:1至1:12。 曝光区域可以是孔，开口或它们的组合。 优选的样品含有约200-600mg的CaCO 3，MgCl 2为50-150mg或MgSO 4为50-100mg。 与胃酸有利的CaCO3片剂反应为：CaCO3 + 2HCL = CaCL2 + H2CO3 = Ca ++ + 2CL + + H2O + CO2↑。 二氧化碳是天然气泡沫经纪人。 胃HCL是天然CaCL2制造商。

公开(公告)号：US06630394B2

公开(公告)日：2003-10-07

申请号：US10131162

申请日：2002-04-24

Applicant: Jiong-Ping Lu ,  Jin Zhao ,  Yuqing Xu

Inventor： Jiong-Ping Lu ,  Jin Zhao ,  Yuqing Xu

IPC: H01L21336

CPC classification number: H01L29/41783 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/7834

Abstract: Disclosed is a system for fabricating a semiconductor device (100). A layer of cobalt (32) is deposited onto a silicon region (104, 106, 108) and annealed to form a cobalt silicide layer (118, 120, 122). Silicon layers (124, 126, 128) are selectively deposited onto the cobalt silicide layers (118, 120, 122). The semiconductor device (100) is annealed to form disilicide layers (130, 132, 134) from the cobalt silicide layers (118, 120, 122) and the silicon contained in silicon regions (104, 106, 108) and silicon layers (124, 126, 128).

Abstract translation: 公开了一种用于制造半导体器件（100）的系统。 一层钴（32）沉积在硅区（104,106,108）上并退火以形成硅化钴层（118,120,122）。 硅层（124,126,128）被选择性地沉积在钴硅化物层（118,120,122）上。 半导体器件（100）被退火以形成来自硅化钴层（118,120,122）的二硅化物层（130,132,134）和包含在硅区域（104,106,108）和硅层（124）中的硅 ，126,128）。

公开(公告)号：US06417242B1

公开(公告)日：2002-07-09

申请号：US09970282

申请日：2001-10-02

Applicant: Kevin R. Hughes ,  Robert L. Sammler ,  Kyung W. Suh ,  Jin Zhao ,  Johan A. Thoen ,  Martin H. Tusim

Inventor： Kevin R. Hughes ,  Robert L. Sammler ,  Kyung W. Suh ,  Jin Zhao ,  Johan A. Thoen ,  Martin H. Tusim

IPC: C08J900

CPC classification number: C08J9/141 ,  C08J9/106 ,  C08J9/14 ,  C08J2205/052 ,  C08J2323/12 ,  C08L23/10 ,  C08L2203/14

Abstract: The present invention relates to a foam, a process for preparing the foam and an article containing the foam. The foam contains a coupled propylene polymer and has a density in of from 9.6 to 801 kg/m3 and has either a foamability factor of more than 1.8 to less than 2.8 and an open cell content less than 20 percent, or a foamability factor of at least 2.8 and less than 15 and an open cell content of less than 50 percent. The process includes heating a coupled propylene polymer having a melt flow rate from 0.2 to 20 g/10 min and a melt strength of at least 39 cN to a molten state to produce a molten polymer material and mixing said molten polymer material with a blowing agent under conditions to produce a foamed material having a density in the range of from 9.6 to 801 kg/m3.

Abstract translation: 本发明涉及泡沫，制备泡沫的方法和含有泡沫的物品。 该泡沫体含有一种偶联的丙烯聚合物，其密度为9.6至801kg / m 3，并且具有大于1.8至小于2.8的发泡性因子，开孔率低于20％，或 至少2.8和小于15，开孔含量小于50％。 该方法包括加热熔融流动速率为0.2-20g / 10min，熔体强度至少为39cN的熔融态丙烯聚合物，生成熔融聚合物材料，并将所述熔融聚合物材料与发泡剂 在生产密度在9.6至801kg / m 3范围内的发泡材料的条件下。