发明申请
- 专利标题: Via hole forming method
- 专利标题(中): 通孔形成方法
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申请号: US11902046申请日: 2007-09-18
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公开(公告)号: US20080076256A1公开(公告)日: 2008-03-27
- 发明人: Akihito Kawai , Takashi Ono , Hiroshi Morikazu
- 申请人: Akihito Kawai , Takashi Ono , Hiroshi Morikazu
- 专利权人: Disco Corporation
- 当前专利权人: Disco Corporation
- 优先权: JP2006-257082 20060922
- 主分类号: H01L21/311
- IPC分类号: H01L21/311
摘要:
A method of forming a via hole reaching a bonding pad in a wafer, which have a plurality of devices on the front surface of a substrate and bonding pads on each of the devices, by applying a pulse laser beam from the rear surface of the substrate, comprising the steps of:affixing a protective member to the front surface of the substrate;grinding the rear surface of the substrate having the protective member affixed to the front surface to reduce the thickness of the wafer to a predetermined value;forming via holes in the substrate by applying a pulse laser beam from the rear surface of the substrate of the wafer having the predetermined thickness; andetching the wafer having the via holes in the substrate from the rear surface of the substrate.