发明申请
- 专利标题： METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, APPARATUS OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法，制造半导体器件和半导体器件的装置
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申请号： US11690450申请日： 2007-03-23
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公开(公告)号： US20080076261A1公开(公告)日： 2008-03-27
- 发明人: Hiroshi Katsumata , Katsuaki Aoki
- 申请人： Hiroshi Katsumata , Katsuaki Aoki
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-258536 20060925; JP2007-070033 20070319
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method of manufacturing a semiconductor device includes: etching a first film provided on a wafer in a chamber; removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause a distribution state of the deposited reaction products to get closer to a uniform state; and then etching a second film provided on the wafer in the chamber.
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