发明申请
- 专利标题： METHOD FOR POST-CMP WAFER SURFACE CLEANING
- 专利标题（中）： 后CMP抛光表面清洗方法
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申请号： US11618654申请日： 2006-12-29
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公开(公告)号： US20080078420A1公开(公告)日： 2008-04-03
- 发明人: Jing Wen , Shoulong Zhang , Yangbo Li , Jun Lin , Po-Cheng Chiu , Teh-Wei Ger , Paul Chang Lin
- 申请人： Jing Wen , Shoulong Zhang , Yangbo Li , Jun Lin , Po-Cheng Chiu , Teh-Wei Ger , Paul Chang Lin
- 申请人地址： CN Shanghai
- 专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (Shanghai) CORPORATION
- 当前专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (Shanghai) CORPORATION
- 当前专利权人地址： CN Shanghai
- 优先权： CN200610116851.8 20060930
- 主分类号： B08B3/12
- IPC分类号： B08B3/12
摘要：
A method for cleaning a wafer after a Chemical Mechanical Polishing (CMP) of the wafer includes: performing an ultrasonic cleaning on the wafer for time T1; cleaning the wafer with a chemical agent and then with deionized water for n times for time T2, T3, . . . , Tn+1, respectively, n being an integer; drying the wafer for time Tn+2; wherein the maximum value among T2, T3, . . . , Tn+2 is Tmax, where in the case of T1