Invention Application
- Patent Title: Semiconductor device having asymmetric bulb-type recess gate and method for manufacturing the same
- Patent Title (中): 具有不对称灯泡型凹槽的半导体器件及其制造方法
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Application No.: US11647875Application Date: 2006-12-29
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Publication No.: US20080079068A1Publication Date: 2008-04-03
- Inventor: Kyung Do Kim
- Applicant: Kyung Do Kim
- Priority: KR10-2006-0096719 20060930
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336

Abstract:
A semiconductor device includes a silicon substrate; a device isolation structure formed in the silicon substrate to delimit an active region which has a pair of gate forming areas, a drain forming area between the gate forming areas, and source forming areas outside the gate forming areas; an asymmetric bulb-type recess gate formed in each gate forming area of the active region and having the shape of a bulb on the lower end portion of the sidewall thereof facing the source forming area; and source and drain areas respectively formed on the surface of the substrate on both sides of the asymmetric bulb-type recess gate.
Public/Granted literature
- US07825463B2 Semiconductor device having asymmetric bulb-type recess gate and method for manufacturing the same Public/Granted day:2010-11-02
Information query
IPC分类: