- 专利标题： Semiconductor device including a high voltage generation circuit and method of generating a high voltage
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申请号： US11605223申请日： 2006-11-29
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公开(公告)号： US20080079503A1公开(公告)日： 2008-04-03
- 发明人: Dae-Seok Byeon , Dong-Hyuk Chae
- 申请人： Dae-Seok Byeon , Dong-Hyuk Chae
- 优先权： KR10-2006-0094799 20060928
- 主分类号： H03L7/00
- IPC分类号： H03L7/00
摘要：
A semiconductor memory device includes a first pump clock generator configured to generate a first pump clock signal based on a power supply voltage. The device also includes a first charge pump configured to generate a first pump output voltage in response to the first pump clock signal. The device also includes a second pump clock generator configured to generate a second pump clock signal based on the first pump output voltage. The device also includes a second charge pump configured to generate a second pump output voltage in response to the second pump clock signal. The device also includes a switching unit configured to selectively connect the first charge pump to the second charge pump.
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