发明申请
- 专利标题: STACKED STRUCTURES AND METHODS OF FORMING STACKED STRUCTURES
- 专利标题(中): 堆叠结构和形成堆叠结构的方法
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申请号: US11539481申请日: 2006-10-06
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公开(公告)号: US20080083959A1公开(公告)日: 2008-04-10
- 发明人: Weng-Jin Wu , Wen-Chih Chiou , Chen-Hua Yu
- 申请人: Weng-Jin Wu , Wen-Chih Chiou , Chen-Hua Yu
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L29/84
- IPC分类号: H01L29/84
摘要:
A stacked structure includes a first die bonded over a second die. The first die has a first die area defined over a first surface. At least one first protective structure is formed over the first surface, around the first die area. At least one side of the first protective structure has at least one first extrusion part extending across a first scribe line around the protective structure. The second die has a second die area defined over a second surface. At least one second protective structure is formed over the second surface, around the second die area. At least one side of the second protective structure has at least one second extrusion part extending across a second scribe line around the protective structure, wherein the first extrusion part is connected with the second extrusion part.
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