发明申请
- 专利标题: Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof
- 专利标题(中): 氮化物半导体发光器件及其制造方法
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申请号: US11661185申请日: 2005-08-19
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公开(公告)号: US20080093610A1公开(公告)日: 2008-04-24
- 发明人: Suk Lee
- 申请人: Suk Lee
- 优先权: KR10-2004-0067494 20040826
- 国际申请: PCT/KR05/02756 WO 20050819
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A nitride semiconductor light emitting device comprises a first nitride semiconductor layer, an active layer of a single or multiple quantum well structure formed on the first nitride semiconductor layer and including an InGaN well layer and a multilayer barrier layer, and a second nitride semiconductor layer formed on the active layer. A fabrication method of a nitride semiconductor light emitting device comprises: forming a buffer layer on a substrate, forming a GaN layer on the buffer layer, forming a first electrode layer on the GaN layer, forming an InxGa1-xN layer on the first electrode layer, forming on the first InxGa1-xN layer an active layer including an InGaN well layer and a multilayer barrier layer for emitting light, forming a p-GaN layer on the active layer, and forming a second electrode layer on the p-GaN layer.