Invention Application
US20080093646A1 Non-volatile memory device and method for fabricating the same 审中-公开
非易失性存储器件及其制造方法

Non-volatile memory device and method for fabricating the same
Abstract:
A non-volatile memory device comprises a semiconductor substrate having source/drain regions formed at both ends of a channel region, a gate structure forming an offset region by being separated a predetermined distance from the source region and comprising a charge accumulation region and a control gate sequentially deposited in the channel region to at least partially overlap the drain region, and a spacer arranged at each of both side walls of the gate structure. A threshold voltage value of the offset region changes depending on a dielectric constant of the spacer.
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