Invention Application
- Patent Title: Non-volatile memory device and method for fabricating the same
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US11602075Application Date: 2006-11-20
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Publication No.: US20080093646A1Publication Date: 2008-04-24
- Inventor: Yong-Kyu Lee , Jeong-Uk Han , Hee-Seog Jeon , Young Ho Kim , Myung-Jo Chun
- Applicant: Yong-Kyu Lee , Jeong-Uk Han , Hee-Seog Jeon , Young Ho Kim , Myung-Jo Chun
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Priority: KR10-2006-0101256 20061018
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
A non-volatile memory device comprises a semiconductor substrate having source/drain regions formed at both ends of a channel region, a gate structure forming an offset region by being separated a predetermined distance from the source region and comprising a charge accumulation region and a control gate sequentially deposited in the channel region to at least partially overlap the drain region, and a spacer arranged at each of both side walls of the gate structure. A threshold voltage value of the offset region changes depending on a dielectric constant of the spacer.
Information query
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