发明申请
- 专利标题： PROCESS FOR MODIFYING OFFSET VOLTAGE CHARACTERISTICS OF AN INTERFEROMETRIC MODULATOR
- 专利标题（中）： 用于修改干涉仪调制器偏移电压特性的方法
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申请号： US11961744申请日： 2007-12-20
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公开(公告)号： US20080093688A1公开(公告)日： 2008-04-24
- 发明人: William Cummings , Brian Gally
- 申请人： William Cummings , Brian Gally
- 申请人地址： US CA San Francisco
- 专利权人： IDC, LLC
- 当前专利权人： IDC, LLC
- 当前专利权人地址： US CA San Francisco
- 主分类号： H01L29/84
- IPC分类号： H01L29/84 ; H01L21/00
摘要：
An interferometric modulator manufactured according to a particular set of processing parameters may have a non-zero offset voltage. A process has been developed for modifying the processing parameters to shift the non-zero offset voltage closer to zero. For example, the process may involve identifying a set of processing parameters for manufacturing an interferometric modulator that results in a non-zero offset voltage for the interferometric modulator. The set of processing parameters may then be modified to shift the non-zero offset voltage closer to zero. For example, modifying the set of processing parameters may involve modifying one or more deposition parameters used to make the interferometric modulator, applying a current (e.g., a counteracting current) to the interferometric modulator, and/or annealing the interferometric modulator. Interferometric modulators made according to the set of modified processing parameters may have improved performance and/or simpler drive schemes.