Invention Application
US20080096371A1 Process For Producing P-Doped and Epitaxially Coated Semiconductor Wafers From Silicon
有权
用于从硅生产P掺杂和外延涂覆的半导体晶片的工艺
- Patent Title: Process For Producing P-Doped and Epitaxially Coated Semiconductor Wafers From Silicon
- Patent Title (中): 用于从硅生产P掺杂和外延涂覆的半导体晶片的工艺
-
Application No.: US11870565Application Date: 2007-10-11
-
Publication No.: US20080096371A1Publication Date: 2008-04-24
- Inventor: Wilfried von Ammon , Katsuhiko Nakai , Martin Weber , Herbert Schmidt , Atsushi Ikari
- Applicant: Wilfried von Ammon , Katsuhiko Nakai , Martin Weber , Herbert Schmidt , Atsushi Ikari
- Applicant Address: DE Munich
- Assignee: SILTRONIC AG
- Current Assignee: SILTRONIC AG
- Current Assignee Address: DE Munich
- Priority: DE102006049231.5 20061018
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
The Czochralski method is used for producing p−-doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with boron, hydrogen and nitrogen, and the single crystal thus obtained is processed to form p−-doped semiconductor wafers which are epitaxially coated.
Public/Granted literature
- US07470323B2 Process for producing p-doped and epitaxially coated semiconductor wafers from silicon Public/Granted day:2008-12-30
Information query
IPC分类:
