发明申请
US20080101131A1 Semiconductor memory device and method for reducing cell activation during write operations
有权
用于在写入操作期间减少电池激活的半导体存储器件和方法
- 专利标题: Semiconductor memory device and method for reducing cell activation during write operations
- 专利标题(中): 用于在写入操作期间减少电池激活的半导体存储器件和方法
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申请号: US11790146申请日: 2007-04-24
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公开(公告)号: US20080101131A1公开(公告)日: 2008-05-01
- 发明人: Kwang-Jin Lee , Sang-Beom Kang , Hyung-Rok Oh , Beak-Hyung Cho , Woo-Yeong Cho
- 申请人: Kwang-Jin Lee , Sang-Beom Kang , Hyung-Rok Oh , Beak-Hyung Cho , Woo-Yeong Cho
- 优先权: KR2006-0107096 20061101
- 主分类号: G11C7/06
- IPC分类号: G11C7/06
摘要:
Embodiments of the invention provide devices or methods that include a status bit representing an inversion of stored data. New data is written to selected cells, the new data is selectively inverted, and the status bit is selectively toggled, based on a comparison between pre-existing data and new data associated with a write command. A benefit of embodiments of the invention is that fewer memory cells must be activated in many instances (when compared to conventional art approaches). Moreover, embodiments of the invention may also reduce the average amount of activation current required to write to variable resistive memory devices and other memory device types.
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