发明申请
- 专利标题： ETCHING OXIDE WITH HIGH SELECTIVITY TO TITANIUM NITRIDE
- 专利标题（中）： 氧化氮对硝酸钛的选择性高
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申请号： US11554425申请日： 2006-10-30
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公开(公告)号： US20080102640A1公开(公告)日： 2008-05-01
- 发明人: Sajjad Amin Hassan , Chentsau Ying
- 申请人： Sajjad Amin Hassan , Chentsau Ying
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 主分类号： H01L21/461
- IPC分类号： H01L21/461 ; C23C16/00
摘要：
A substrate comprising an oxide layer covering a nitride layer, is etched in a process zone of a substrate processing chamber. A process gas comprising H2 gas is introduced into the process zone, and the process gas is energized to etch through the oxide layer to at least partially expose the nitride layer. The energized process gas has a selectivity of etching the oxide layer to the nitride layer of at least about 25:1.
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