发明申请
US20080104309A1 Flash memory device with multi-level cells and method of writing data therein
有权
具有多级单元的闪存设备及其中写入数据的方法
- 专利标题： Flash memory device with multi-level cells and method of writing data therein
- 专利标题（中）： 具有多级单元的闪存设备及其中写入数据的方法
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申请号： US11702573申请日： 2007-02-06
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公开(公告)号： US20080104309A1公开(公告)日： 2008-05-01
- 发明人: Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
- 申请人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
- 优先权： KR2006-105692 20061030
- 主分类号： G06F12/06
- IPC分类号： G06F12/06
摘要：
In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
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