发明申请
US20080109104A1 System, method, and medium for an endpoint detection scheme for copper low-dielectric damascene structures for improved dielectric and copper loss
有权
用于铜低介电镶嵌结构的端点检测方案的系统，方法和介质，用于改善电介质和铜损耗
- 专利标题： System, method, and medium for an endpoint detection scheme for copper low-dielectric damascene structures for improved dielectric and copper loss
- 专利标题（中）： 用于铜低介电镶嵌结构的端点检测方案的系统，方法和介质，用于改善电介质和铜损耗
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申请号： US12004730申请日： 2007-12-21
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公开(公告)号： US20080109104A1公开(公告)日： 2008-05-08
- 发明人: Ajoy Zutshi , Rahul Surana , Girish Dixit
- 申请人： Ajoy Zutshi , Rahul Surana , Girish Dixit
- 主分类号： G06F19/00
- IPC分类号： G06F19/00 ; G06F3/048 ; G06F12/00 ; G06F17/30
摘要：
A system, method and medium of detecting a transition interface between a first dielectric material and an adjacent second dielectric material in a semiconductor wafer during a chemical-mechanical polishing process includes impinging an incident light of a predetermined wavelength on the semiconductor wafer at a first time, detecting at least one first intensity of at least one first reflected light, impinging the incident light of the predetermined wavelength on the semiconductor wafer at a second time, detecting at least one second intensity of at least one second reflected light, and determining a difference between the at least one first intensity and the at least one second intensity. If the difference between the at least one first intensity and the at least one second intensity is above a predetermined threshold, the chemical-mechanical polishing process is terminated.