公开(公告)号：US20080109104A1

公开(公告)日：2008-05-08

申请号：US12004730

申请日：2007-12-21

申请人： Ajoy Zutshi ,  Rahul Surana ,  Girish Dixit

发明人： Ajoy Zutshi ,  Rahul Surana ,  Girish Dixit

IPC分类号： G06F19/00 ,  G06F3/048 ,  G06F12/00 ,  G06F17/30

CPC分类号： B24B37/013 ,  B24B49/12 ,  G01N21/55 ,  H01L22/26

摘要： A system, method and medium of detecting a transition interface between a first dielectric material and an adjacent second dielectric material in a semiconductor wafer during a chemical-mechanical polishing process includes impinging an incident light of a predetermined wavelength on the semiconductor wafer at a first time, detecting at least one first intensity of at least one first reflected light, impinging the incident light of the predetermined wavelength on the semiconductor wafer at a second time, detecting at least one second intensity of at least one second reflected light, and determining a difference between the at least one first intensity and the at least one second intensity. If the difference between the at least one first intensity and the at least one second intensity is above a predetermined threshold, the chemical-mechanical polishing process is terminated.

摘要翻译： 在化学机械抛光工艺期间检测半导体晶片中的第一介电材料和相邻的第二介电材料之间的过渡界面的系统，方法和介质包括在第一时间在半导体晶片上入射预定波长的入射光 检测至少一个第一强度的至少一个第一反射光，在第二时间将预定波长的入射光照射在半导体晶片上，检测至少一个第二强度的至少一个第二反射光，并确定差异 在所述至少一个第一强度和所述至少一个第二强度之间。 如果所述至少一个第一强度和所述至少一个第二强度之间的差异高于预定阈值，则终止所述化学机械抛光处理。

公开(公告)号：US20070054495A1

公开(公告)日：2007-03-08

申请号：US11509223

申请日：2006-08-24

申请人： Timothy Compton ,  Junaid Siddiqui ,  Ajoy Zutshi

发明人： Timothy Compton ,  Junaid Siddiqui ,  Ajoy Zutshi

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31053

摘要： A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords high removal rates for barrier layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

摘要翻译： 描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。 该组合物含有硼表面改性的研磨剂，硝基取代的磺酸化合物，每一种化合物的氧化剂和水。 该组合物在金属CMP工艺中为阻挡层材料提供高的去除率。 该组合物特别适用于金属CMP应用的相关方法（例如，步骤2铜CMP工艺）。

公开(公告)号：US20090061630A1

公开(公告)日：2009-03-05

申请号：US12195840

申请日：2008-08-21

申请人： Bentley J. Palmer ,  Ann Marie Meyers ,  Suresh Shrauti ,  Guangying Zhang ,  Ajoy Zutshi

发明人： Bentley J. Palmer ,  Ann Marie Meyers ,  Suresh Shrauti ,  Guangying Zhang ,  Ajoy Zutshi

IPC分类号： H01L21/304

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： A method using an associated composition for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) is described. This method affords low dishing and local erosion levels on the metal during CMP processing of the metal-containing substrate.

摘要翻译： 描述了使用用于含金属的衬底（例如，铜衬底）的化学机械平坦化的相关组合物的方法。 该方法在含金属衬底的CMP处理期间在金属上提供低的凹陷和局部侵蚀水平。

公开(公告)号：US07848839B2

公开(公告)日：2010-12-07

申请号：US12004730

申请日：2007-12-21

申请人： Ajoy Zutshi ,  Rahul Surana ,  Girish Dixit

发明人： Ajoy Zutshi ,  Rahul Surana ,  Girish Dixit

IPC分类号： G06F19/00 ,  G05B15/00

CPC分类号： B24B37/013 ,  B24B49/12 ,  G01N21/55 ,  H01L22/26

摘要： A system, method and medium of detecting a transition interface between a first dielectric material and an adjacent second dielectric material in a semiconductor wafer during a chemical-mechanical polishing process includes impinging an incident light of a predetermined wavelength on the semiconductor wafer at a first time, detecting at least one first intensity of at least one first reflected light, impinging the incident light of the predetermined wavelength on the semiconductor wafer at a second time, detecting at least one second intensity of at least one second reflected light, and determining a difference between the at least one first intensity and the at least one second intensity. If the difference between the at least one first intensity and the at least one second intensity is above a predetermined threshold, the chemical-mechanical polishing process is terminated.

摘要翻译： 在化学机械抛光工艺期间检测半导体晶片中的第一介电材料和相邻的第二介电材料之间的过渡界面的系统，方法和介质包括在第一时间在半导体晶片上入射预定波长的入射光 检测至少一个第一强度的至少一个第一反射光，在第二时间将预定波长的入射光照射在半导体晶片上，检测至少一个第二强度的至少一个第二反射光，并确定差异 在所述至少一个第一强度和所述至少一个第二强度之间。 如果所述至少一个第一强度和所述至少一个第二强度之间的差异高于预定阈值，则终止所述化学机械抛光处理。

公开(公告)号：US20050032459A1

公开(公告)日：2005-02-10

申请号：US10809906

申请日：2004-03-26

申请人： Rahul Surana ,  Ajoy Zutshi

发明人： Rahul Surana ,  Ajoy Zutshi

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/10 ,  B24B49/12

CPC分类号： B24B49/10 ,  B24B37/16 ,  B24B49/12

摘要： A technique of the present invention utilizes qualification characteristics from a single wafer for qualifying a semiconductor manufacturing tool. Generally speaking, the technique commences with the processing of a wafer by the manufacturing tool. During processing, one or more qualification characteristics required to properly qualify the tool are measured using an in situ sensor or metrology device. Subsequently, the manufacturing tool is qualified by adjusting one or more parameters of a recipe in accordance with the qualification characteristics measured from the wafer to target one or more manufacturing tool specifications. In some embodiments, the tool to be qualified includes a bulk removal polishing platen, a copper clearing platen and a barrier removal polishing platen. In these cases, the technique involves transferring a wafer to each of the bulk removal polishing platen, copper clearing platen and barrier removal polishing platen, where qualification characteristics are measured from the wafer during processing. These platens are subsequently qualified by adjusting one or more parameters of a recipe associated with each platen in accordance with the qualification characteristics measured from the wafer, to target one or more platen specifications.

摘要翻译： 本发明的技术利用来自单个晶片的鉴定特性来限定半导体制造工具。 一般来说，该技术开始于通过制造工具处理晶片。 在处理过程中，使用原位传感器或计量装置测量正确限定工具所需的一个或多个限定特性。 随后，通过根据从晶片测量的限定特性来调整配方的一个或多个参数以达到一个或多个制造工具规格，从而对制造工具进行限定。 在一些实施例中，要被认证的工具包括散装移除抛光压板，铜清除压板和屏障移除抛光压板。 在这些情况下，该技术涉及将晶片转移到每个散装移除抛光平台，铜清除压板和屏障去除抛光平台上，其中在处理期间从晶片测量鉴定特性。 这些压板随后通过根据从晶片测量的鉴定特性调整与每个压板相关联的配方的一个或多个参数来限定，以达到一个或多个压板规格。

公开(公告)号：US06261158B1

公开(公告)日：2001-07-17

申请号：US09212929

申请日：1998-12-16

申请人： Karey Holland ,  Ajoy Zutshi ,  Fen Dai ,  Yehiel Gotkis ,  C. Jerry Yang ,  Dennis Schey ,  Fred Mitchel ,  Lin Yang

发明人： Karey Holland ,  Ajoy Zutshi ,  Fen Dai ,  Yehiel Gotkis ,  C. Jerry Yang ,  Dennis Schey ,  Fred Mitchel ,  Lin Yang

IPC分类号： B24B100

CPC分类号： B24B37/04 ,  H01L21/3212 ,  H01L21/7684

摘要： A multi-step CMP system is used to polish a wafer to form metal interconnects in a dielectric layer upon which barrier and metal layers have been formed. A first polish removes an upper portion of the metal layer using a first slurry and a first set of polishing parameters, leaving residual metal within the dielectric layer to serve as the metal interconnects. A second polish of the wafer on the same platen and polishing pad removes portions of the barrier layer using a second slurry under a second set of polishing parameters. The second polish clears the barrier layer from the upper surface of the dielectric layer, thereby forming the metal interconnect. To reduce dishing and dielectric erosion, the second slurry is selected so that the barrier layer is removed at a faster rate than the residual metal within the dielectric layer. A cleaning step may be optionally performed between the first and second polishes. Further, the first polish may include a soft landing step to further reduce dishing and dielectric erosion. Alternatively, the first polish may be used to remove portions of the metal and barrier layers, leaving residual metal in the dielectric layer to serve as the metal interconnect. A second polish using a dielectric slurry is then performed to reduce microscratches.

摘要翻译： 使用多步CMP系统来抛光晶片以在形成有阻挡层和金属层的电介质层中形成金属互连。 第一抛光剂使用第一浆料和第一组抛光参数去除金属层的上部，留下介电层内的残余金属用作金属互连。 在同一压板和抛光垫上的晶片的第二次抛光在第二组抛光参数下使用第二浆料去除部分阻挡层。 第二抛光从电介质层的上表面清除阻挡层，从而形成金属互连。 为了减少凹陷和电介质侵蚀，选择第二浆料，使得以比介电层内的残余金属更快的速率去除阻挡层。 可以可选地在第一和第二抛光剂之间执行清洁步骤。 此外，第一抛光剂可以包括软着陆步骤以进一步减少凹陷和电介质侵蚀。 或者，可以使用第一抛光剂去除金属和阻挡层的部分，在电介质层中留下残余金属用作金属互连。 然后使用电介质浆料进行第二次抛光，以减少微细纹。

公开(公告)号：US07678702B2

公开(公告)日：2010-03-16

申请号：US11509223

申请日：2006-08-24

申请人： Timothy Frederick Compton ,  Junaid Ahmed Siddiqui ,  Ajoy Zutshi

发明人： Timothy Frederick Compton ,  Junaid Ahmed Siddiqui ,  Ajoy Zutshi

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31053

摘要： A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords high removal rates for barrier layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

摘要翻译： 描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。 该组合物含有硼表面改性的研磨剂，硝基取代的磺酸化合物，每一种化合物的氧化剂和水。 该组合物在金属CMP工艺中为阻挡层材料提供高的去除率。 该组合物特别适用于金属CMP应用的相关方法（例如，步骤2铜CMP工艺）。

公开(公告)号：US07514363B2

公开(公告)日：2009-04-07

申请号：US11212628

申请日：2005-08-29

申请人： Gautam Banerjee ,  Timothy Frederick Compton ,  Junaid Ahmed Siddiqui ,  Ajoy Zutshi

发明人： Gautam Banerjee ,  Timothy Frederick Compton ,  Junaid Ahmed Siddiqui ,  Ajoy Zutshi

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C09G1/02 ,  C11D3/3947 ,  C11D7/20 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/32125

摘要： A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

摘要翻译： 描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。 该组合物含有磨料，苯磺酸化合物，每一化合物氧化剂和水。 该组合物在金属CMP工艺中提供金属，阻挡层材料和介电层材料的去除速率的可调性。 该组合物特别适用于金属CMP应用的相关方法（例如，步骤2铜CMP工艺）。

公开(公告)号：US20060079007A1

公开(公告)日：2006-04-13

申请号：US10960508

申请日：2004-10-08

申请人： Ajoy Zutshi ,  Rahul Surana ,  Girish Dixit

发明人： Ajoy Zutshi ,  Rahul Surana ,  Girish Dixit

IPC分类号： H01L21/00

CPC分类号： B24B37/013 ,  B24B49/12 ,  G01N21/55 ,  H01L22/26

摘要： A system, method and medium of detecting a transition interface between a first dielectric material and an adjacent second dielectric material in a semiconductor wafer during a chemical-mechanical polishing process includes impinging an incident light of a predetermined wavelength on the semiconductor wafer at a first time, detecting at least one first intensity of at least one first reflected light, impinging the incident light of the predetermined wavelength on the semiconductor wafer at a second time, detecting at least one second intensity of at least one second reflected light, and determining a difference between the at least one first intensity and the at least one second intensity. If the difference between the at least one first intensity and the at least one second intensity is above a predetermined threshold, the chemical-mechanical polishing process is terminated.

摘要翻译： 在化学机械抛光工艺期间检测半导体晶片中的第一介电材料和相邻的第二介电材料之间的过渡界面的系统，方法和介质包括在第一时间在半导体晶片上入射预定波长的入射光 检测至少一个第一强度的至少一个第一反射光，在第二时间将预定波长的入射光照射在半导体晶片上，检测至少一个第二强度的至少一个第二反射光，并确定差异 在所述至少一个第一强度和所述至少一个第二强度之间。 如果所述至少一个第一强度和所述至少一个第二强度之间的差异高于预定阈值，则终止所述化学机械抛光处理。

公开(公告)号：US06620027B2

公开(公告)日：2003-09-16

申请号：US10044379

申请日：2002-01-09

申请人： Ajoy Zutshi ,  Rajeev Bajaj ,  Fred C. Redeker ,  Yutao Ma ,  Kapila Wijekoon

发明人： Ajoy Zutshi ,  Rajeev Bajaj ,  Fred C. Redeker ,  Yutao Ma ,  Kapila Wijekoon

IPC分类号： B24B5100

CPC分类号： B24B37/12 ,  B24B37/042 ,  B24B37/24

摘要： Methods and apparatus for planarizing a substrate surface having copper containing materials thereon is provided. In one aspect, the invention provides a system for processing substrates comprising a first platen adapted for polishing a substrate with a hard polishing pad disposed on the first platen, a second platen adapted for polishing a substrate with a hard polishing pad disposed on the second platen, and a third platen adapted for polishing a substrate with a hard polishing pad disposed on the third platen. In another aspect, the invention provides a method for planarizing a substrate surface by the system described above including substantially removing bulk copper containing materials on the first platen, removing residual copper containing materials on the second platen, and then removing a barrier layer on the third platen. A computer readable program may also be provided for performing the methods described herein.