A fast FET and a method and system for designing the fast FET. The method includes: selecting a reference design for a field effect transistor, the field effect transistor including a source, a drain, a channel between the source and drain, a gate electrode over the channel, at least one source contact to the source and at least one contact to the drain, the at least one source contact spaced a first distance from the gate electrode and the at least one drain contact spaced a second distance from the gate electrode; and adjusting the first distance and the second distance to maximize a performance parameter of the field effect transistor to create a fast design for the field effect transistor.